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Dang, Jun-Ning, Zheng, Shu-wen, Chen, Lang, Zheng, Tao (2019) Electronic structures and optical properties of Si- and Sn-doped β -Ga 2 O 3 : A GGA+ U study. Chinese Physics B, 28. 16301pp. doi:10.1088/1674-1056/28/1/016301

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structures and optical properties of Si- and Sn-doped β -Ga 2 O 3 : A GGA+ U study
JournalChinese Physics B
AuthorsDang, Jun-NingAuthor
Zheng, Shu-wenAuthor
Chen, LangAuthor
Zheng, TaoAuthor
Year2019 (January)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/28/1/016301Search in ResearchGate
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Mindat Ref. ID6009783Long-form Identifiermindat:1:5:6009783:7
GUID0
Full ReferenceDang, Jun-Ning, Zheng, Shu-wen, Chen, Lang, Zheng, Tao (2019) Electronic structures and optical properties of Si- and Sn-doped β -Ga 2 O 3 : A GGA+ U study. Chinese Physics B, 28. 16301pp. doi:10.1088/1674-1056/28/1/016301
Plain TextDang, Jun-Ning, Zheng, Shu-wen, Chen, Lang, Zheng, Tao (2019) Electronic structures and optical properties of Si- and Sn-doped β -Ga 2 O 3 : A GGA+ U study. Chinese Physics B, 28. 16301pp. doi:10.1088/1674-1056/28/1/016301
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing


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