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Zhao, Yue, Wang, Nan, Yu, Kai, Zhang, Xiaoming, Li, Xiuli, Zheng, Jun, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo (2019) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application. Chinese Physics B, 28. 128501pp. doi:10.1088/1674-1056/ab4e84

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Reference TypeJournal (article/letter/editorial)
TitleHigh performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application
JournalChinese Physics B
AuthorsZhao, YueAuthor
Wang, NanAuthor
Yu, KaiAuthor
Zhang, XiaomingAuthor
Li, XiuliAuthor
Zheng, JunAuthor
Xue, ChunlaiAuthor
Cheng, BuwenAuthor
Li, ChuanboAuthor
Year2019 (November)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/ab4e84Search in ResearchGate
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Mindat Ref. ID6009977Long-form Identifiermindat:1:5:6009977:4
GUID0
Full ReferenceZhao, Yue, Wang, Nan, Yu, Kai, Zhang, Xiaoming, Li, Xiuli, Zheng, Jun, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo (2019) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application. Chinese Physics B, 28. 128501pp. doi:10.1088/1674-1056/ab4e84
Plain TextZhao, Yue, Wang, Nan, Yu, Kai, Zhang, Xiaoming, Li, Xiuli, Zheng, Jun, Xue, Chunlai, Cheng, Buwen, Li, Chuanbo (2019) High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application. Chinese Physics B, 28. 128501pp. doi:10.1088/1674-1056/ab4e84
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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