Ketsman, I., Losovyj, Y.B., Sokolov, A., Tang, J., Wang, Z., Belashchenko, K.D., Dowben, P.A. (2007) The n-type Gd-doped HfO2 to silicon heterojunction diode. Applied Physics A, 89. 489-492 doi:10.1007/s00339-007-4154-y
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | The n-type Gd-doped HfO2 to silicon heterojunction diode | ||
Journal | Applied Physics A | ||
Authors | Ketsman, I. | Author | |
Losovyj, Y.B. | Author | ||
Sokolov, A. | Author | ||
Tang, J. | Author | ||
Wang, Z. | Author | ||
Belashchenko, K.D. | Author | ||
Dowben, P.A. | Author | ||
Year | 2007 (August 25) | Volume | 89 |
Publisher | Springer Science and Business Media LLC | ||
DOI | doi:10.1007/s00339-007-4154-ySearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6013023 | Long-form Identifier | mindat:1:5:6013023:9 |
GUID | 0 | ||
Full Reference | Ketsman, I., Losovyj, Y.B., Sokolov, A., Tang, J., Wang, Z., Belashchenko, K.D., Dowben, P.A. (2007) The n-type Gd-doped HfO2 to silicon heterojunction diode. Applied Physics A, 89. 489-492 doi:10.1007/s00339-007-4154-y | ||
Plain Text | Ketsman, I., Losovyj, Y.B., Sokolov, A., Tang, J., Wang, Z., Belashchenko, K.D., Dowben, P.A. (2007) The n-type Gd-doped HfO2 to silicon heterojunction diode. Applied Physics A, 89. 489-492 doi:10.1007/s00339-007-4154-y | ||
In | (2007) Applied Physics A Vol. 89. Springer Science and Business Media LLC |
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