Pech-Canul, M.I., de la Peña, J.L., Leal-Cruz, A.L. (2007) Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6. Applied Physics A, 89. 729-735 doi:10.1007/s00339-007-4153-z
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6 | ||
Journal | Applied Physics A | ||
Authors | Pech-Canul, M.I. | Author | |
de la Peña, J.L. | Author | ||
Leal-Cruz, A.L. | Author | ||
Year | 2007 (September 21) | Volume | 89 |
Publisher | Springer Science and Business Media LLC | ||
DOI | doi:10.1007/s00339-007-4153-zSearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6013041 | Long-form Identifier | mindat:1:5:6013041:5 |
GUID | 0 | ||
Full Reference | Pech-Canul, M.I., de la Peña, J.L., Leal-Cruz, A.L. (2007) Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6. Applied Physics A, 89. 729-735 doi:10.1007/s00339-007-4153-z | ||
Plain Text | Pech-Canul, M.I., de la Peña, J.L., Leal-Cruz, A.L. (2007) Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6. Applied Physics A, 89. 729-735 doi:10.1007/s00339-007-4153-z | ||
In | (2007) Applied Physics A Vol. 89. Springer Science and Business Media LLC |
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