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Yang, Cheng-Fu, Chen, Kai-Huang, Chen, Ying-Chung, Chang, Ting-Chang (2007) Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices. Applied Physics A, 90. 329-331 doi:10.1007/s00339-007-4277-1

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Reference TypeJournal (article/letter/editorial)
TitlePhysical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices
JournalApplied Physics A
AuthorsYang, Cheng-FuAuthor
Chen, Kai-HuangAuthor
Chen, Ying-ChungAuthor
Chang, Ting-ChangAuthor
Year2007 (November 29)Volume90
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-007-4277-1Search in ResearchGate
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Mindat Ref. ID6013151Long-form Identifiermindat:1:5:6013151:1
GUID0
Full ReferenceYang, Cheng-Fu, Chen, Kai-Huang, Chen, Ying-Chung, Chang, Ting-Chang (2007) Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices. Applied Physics A, 90. 329-331 doi:10.1007/s00339-007-4277-1
Plain TextYang, Cheng-Fu, Chen, Kai-Huang, Chen, Ying-Chung, Chang, Ting-Chang (2007) Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices. Applied Physics A, 90. 329-331 doi:10.1007/s00339-007-4277-1
In(2007) Applied Physics A Vol. 90. Springer Science and Business Media LLC

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Chen, Kai Huang, Chen, Ying Chung, Chia, Wei Kuo, Chen, Zhi Sheng, Yang, Cheng Fu, Chung, Ho Hua (2008) Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application. Key Engineering Materials, 368. 75-77 doi:10.4028/www.scientific.net/kem.368-372.75
Chen, Kai-Huang, Chen, Ying-Chung, Chen, Zhi-Sheng, Yang, Cheng-Fu, Chang, Ting-Chang (2007) Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applications. Applied Physics A, 89. 533-536 doi:10.1007/s00339-007-4108-4
Chen, Kai Huang, Cheng, Chien Chuan, Chen, Ying Chung, Chang, Ting Chang (2007) Reliability of Ba(Zr0.1Ti0.9)O3 Ferroelectric Thin Films under Various Frequencies for Nonvolatile Memory Application. Key Engineering Materials, 336. 73-75 doi:10.4028/www.scientific.net/kem.336-338.73
Chen, Kai-Huang, Chang, Ting-Chang, Chang, Guan-Chang, Hsu, Yung-En, Chen, Ying-Chung, Xu, Hong-Quan (2010) Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates. Applied Physics A, 99. 291-295 doi:10.1007/s00339-009-5523-5
Chen, Kai Huang, Tsai, Jen Hwan, Wu, Chia Lin, Lin, Jian Yang, Cheng, Chien Min (2011) The Ferroelectric Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices. Advanced Materials Research, 239. 895-898 doi:10.4028/www.scientific.net/amr.239-242.895
Chen, Kai-Huang, Chen, Ying-Chung, Yang, Cheng-Fu, Chang, Ting-Chang (2008) Fabrication and characteristics of Ba(Zr0.1,Ti0.9)O3 thin films on glass substrate. Journal of Physics and Chemistry of Solids, 69. 461-464 doi:10.1016/j.jpcs.2007.07.082
Tzou, Wen Cheng, Chen, Kai Huang, Yang, Cheng Fu, Chen, Ying Chung (2010) Memory Properties of SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 Thin Films Prepared on Si Substrate. Key Engineering Materials, 434. 304-306 doi:10.4028/www.scientific.net/kem.434-435.304
Chen, Kai-Huang, Chen, Ying-Chung, Yang, Cheng-Fu, Chen, Zhi-Sheng, Chang, Ting-Chang (2007) Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3Thin Films. Japanese Journal of Applied Physics, 46 (7) 4197-4199 doi:10.1143/jjap.46.4197
Chen, Kai-Huang, Chang, Chia-Hsiung, Cheng, Chien-Min, Yang, Cheng-Fu (2009) Large memory window in the vanadium doped Bi4Ti3O12 thin films. Applied Physics A, 97. 919-923 doi:10.1007/s00339-009-5361-5
Chen, Kai-Huang, Yang, Cheng-Fu, Chang, Chia-Hsiung, Lin, Yi-Jun (2009) Effect of Oxygen Concentration on Characteristics of Ba(Zr0.1Ti0.9)O3Thin Films Deposited on Indium Tin Oxide/Glass Substrates. Japanese Journal of Applied Physics, 48 (9) 91401 doi:10.1143/jjap.48.091401
Tzou, Wen Cheng, Cheng, Chien Min, Chen, Kai Huang, Yang, Hung Chi, Shen, Guan Hung, Yang, Cheng Fu (2010) The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr0.1Ti0.9)O3 Ferroelectric Films on ITO/Glass Substrate. Key Engineering Materials, 434. 289-292 doi:10.4028/www.scientific.net/kem.434-435.289
 
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