Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Xue, Shoubin, Zhang, Xing, Huang, Ru, Zhuang, Huizhao (2009) Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering. Applied Physics A, 94. 287-291 doi:10.1007/s00339-008-4777-7

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSurface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering
JournalApplied Physics A
AuthorsXue, ShoubinAuthor
Zhang, XingAuthor
Huang, RuAuthor
Zhuang, HuizhaoAuthor
Year2009 (February)Volume94
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-008-4777-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6013707Long-form Identifiermindat:1:5:6013707:4
GUID0
Full ReferenceXue, Shoubin, Zhang, Xing, Huang, Ru, Zhuang, Huizhao (2009) Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering. Applied Physics A, 94. 287-291 doi:10.1007/s00339-008-4777-7
Plain TextXue, Shoubin, Zhang, Xing, Huang, Ru, Zhuang, Huizhao (2009) Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering. Applied Physics A, 94. 287-291 doi:10.1007/s00339-008-4777-7
In(2009) Applied Physics A Vol. 94. Springer Science and Business Media LLC

See Also

These are possibly similar items as determined by title/reference text matching only.

Xue, Shoubin, Zhang, Xing, Huang, Ru, Zhuang, Huizhao (2008) Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films. Applied Surface Science, 254. 6766-6769 doi:10.1016/j.apsusc.2008.04.083
Xue, Shoubin, Zhuang, Huizhao, Xue, Chengshan, Teng, Shuyun, Hu, Lijun (2006) Effect of annealing temperature on properties of ZnO thin films on Si(111) substrates by magnetron sputtering. The European Physical Journal Applied Physics, 36 (1). 1-4 doi:10.1051/epjap:2006101
Xue, Shoubin, Zhuang, Huizhao, Xue, Chengshan, Hu, Lijun (2007) Synthesis of one-dimensional GaN nanorods on Si(111) substrates by magnetron sputtering. The European Physical Journal Applied Physics, 37 (1). 53-55 doi:10.1051/epjap:2006126
Zhuang, Huizhao, Shoubin, textscXue (2007) GaN Nanowires Synthesized on Si(111) Substrates by Magnetron Sputtering and Ammonification Technique. Japanese Journal of Applied Physics, 46 (10) 6886-6888 doi:10.1143/jjap.46.6886
Xue, S., Zhuang, H., Xue, C., Hu, L., Li, B., Zhang, S. (2007) Growth and characterization of GaN nanorods through ammoniating process by magnetron sputtering on Si(111) substrates. Applied Physics A, 87. 645-649 doi:10.1007/s00339-007-3885-0
Xue, Shoubin, Zhang, Xing, Huang, Ru, Tian, Deheng, Zhuang, Huizhao, Xue, Chengshan (2008) A simple method for the growth of high-quality GaN nanobelts. Materials Letters, 62. 2743-2745 doi:10.1016/j.matlet.2008.01.031
Shih, Wen-Ching, Wu, Mu-Shiang (1994) Growth of ZnO films on GaAs substrates with a SiO2 buffer layer by RF planar magnetron sputtering for surface acoustic wave applications. Journal of Crystal Growth, 137 (3). 319-325 doi:10.1016/0022-0248(94)90968-7
Xue, Chengshan, Wang, Ying, Zhuang, Huizhao, Wang, Zouping, Huang, Yinglong, Zhang, Dongdong, Cao, Yuping (2009) Fabrication of GaN nanowires by ammoniating Ga2O3/NiCl2 films deposited on Si substrates. Journal of Alloys and Compounds, 484. 33-35 doi:10.1016/j.jallcom.2009.05.086
Zhuang, Huizhao, Xue, Shoubin (2007) Fabrication, morphology and photoluminescence properties of GaN nanowires. The European Physical Journal Applied Physics, 38 (3). 243-246 doi:10.1051/epjap:2007096
Yang, Zhaozhu, Xue, Chengshan, Zhuang, Huizhao, Qin, Lixia, Chen, Jinhua, Li, Hong, Zhang, Dongdong (2008) Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(111). Applied Surface Science, 254. 4166-4170 doi:10.1016/j.apsusc.2007.12.043
Xue, Shoubin, Zhuang, Huizhao, Li, Baoli, Hu, Lijun, Zhang, Shiying, Xue, Chengshan (2007) Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films. Materials Letters, 61. 3867-3869 doi:10.1016/j.matlet.2006.12.049
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 00:36:28
Go to top of page