Reference Type | Journal (article/letter/editorial) |
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Title | Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors |
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Journal | Applied Physics A |
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Authors | Schulz, Leander | Author |
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Yun, Eui-Jung | Author |
Dodabalapur, Ananth | Author |
Year | 2014 (June) | Volume | 115 |
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Publisher | Springer Science and Business Media LLC |
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DOI | doi:10.1007/s00339-014-8422-3Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6017029 | Long-form Identifier | mindat:1:5:6017029:1 |
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GUID | 0 |
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Full Reference | Schulz, Leander, Yun, Eui-Jung, Dodabalapur, Ananth (2014) Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors. Applied Physics A, 115. 1103-1107 doi:10.1007/s00339-014-8422-3 |
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Plain Text | Schulz, Leander, Yun, Eui-Jung, Dodabalapur, Ananth (2014) Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors. Applied Physics A, 115. 1103-1107 doi:10.1007/s00339-014-8422-3 |
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In | (2014) Applied Physics A Vol. 115. Springer Science and Business Media LLC |
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