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Lomov, A. A., Karavanskii, V. A., Imamov, R. M., Sutyrin, A. G., Dravin, V. A. (2002) Structure of porous surface layers of single-crystal GaAs(001) wafers from data of X-ray diffractometry and reflectometry. Crystallography Reports, 47 (6) 1051-1057 doi:10.1134/1.1523526

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Reference TypeJournal (article/letter/editorial)
TitleStructure of porous surface layers of single-crystal GaAs(001) wafers from data of X-ray diffractometry and reflectometry
JournalCrystallography Reports
AuthorsLomov, A. A.Author
Karavanskii, V. A.Author
Imamov, R. M.Author
Sutyrin, A. G.Author
Dravin, V. A.Author
Year2002 (November)Volume47
Issue6
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1523526Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID611370Long-form Identifiermindat:1:5:611370:8
GUID0
Full ReferenceLomov, A. A., Karavanskii, V. A., Imamov, R. M., Sutyrin, A. G., Dravin, V. A. (2002) Structure of porous surface layers of single-crystal GaAs(001) wafers from data of X-ray diffractometry and reflectometry. Crystallography Reports, 47 (6) 1051-1057 doi:10.1134/1.1523526
Plain TextLomov, A. A., Karavanskii, V. A., Imamov, R. M., Sutyrin, A. G., Dravin, V. A. (2002) Structure of porous surface layers of single-crystal GaAs(001) wafers from data of X-ray diffractometry and reflectometry. Crystallography Reports, 47 (6) 1051-1057 doi:10.1134/1.1523526
In(2002, November) Crystallography Reports Vol. 47 (6) Pleiades Publishing Ltd

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Karavanskii, V. A., Lomov, A. A., Sutyrin, A. G., Imamov, R. M., Dravin, V. I., Mel’nik, N. N., Zavaritskaya, T. N. (2003) Influence of defects on the formation of thin porous GaP(001) films. Crystallography Reports, 48 (5) 851-859 doi:10.1134/1.1612605
Lomov, A. A., Sutyrin, A. G., Prokhorov, D. Yu., Galiev, G. B., Khabarov, Yu. V., Chuev, M. A., Imamov, R. M. (2005) Structural characterization of interfaces in the AlxGa1−x As/GaAs/AlxGa1−x As heterostructures by high-resolution X-ray reflectometry and diffractometry. Crystallography Reports, 50 (5) 739-750 doi:10.1134/1.2049390
Lomov, A. A., Bushuev, V. A., Karavanskii, V. A., Bayliss, S. (2003) Characterization of the structure of porous germanium layers by high-resolution X-ray diffractometry. Crystallography Reports, 48 (2) 326-334 doi:10.1134/1.1564216
Lomov, A. A., Prokhorov, D. Yu., Imamov, R. M., Nohavica, D., Gladkov, P. (2006) Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry. Crystallography Reports, 51 (5) 754-760 doi:10.1134/s106377450605004x
Bushuev, V. A., Lomov, A. A., Sutyrin, A. G. (2002) Reconstruction of the surface layer density profile by the X-ray reflectometry method. Crystallography Reports, 47 (4) 683-690 doi:10.1134/1.1496071
Afanas’ev, A. M., Chuev, M. A., Imamov, R. M., Lomov, A. A. (2000) Structural characteristics of multicomponent GaAs-InxGa1-x As system from double-crystal X-ray diffractometry data. Crystallography Reports, 45 (4) 655-660 doi:10.1134/1.1306579
Lomov, A. A., Bushuev, V. A., Karavanskii, V. A. (2000) Study of surface and interface roughnesses in porous silicon by high-resolution X-ray methods. Crystallography Reports, 45 (5) 842-847 doi:10.1134/1.1312933
Lomov, A. A., Myakonkikh, A. V., Rudenko, K. V., Chesnokov, Yu. M. (2014) X-ray reflectometry of the specific features of structural distortions of He+-implanted Si(001) surface layers. Crystallography Reports, 59 (3) 331-337 doi:10.1134/s1063774514020138
Lomov, A. A., Punegov, V. I., Karavanskii, V. A., Vasil’ev, A. L. (2012) X-ray scattering by porous silicon modulated structures. Crystallography Reports, 57 (2) 185-192 doi:10.1134/s1063774511060162
Afanas’ev, A. M., Imamov, R. M. (2003) Structural characterization of quantum-well layers by double-crystal X-ray diffractometry. Crystallography Reports, 48 (5) 728-743 doi:10.1134/1.1612593
Afanas’ev, A. M., Chuev, M. A., Imamov, R. M., Lomov, A. A. (2001) Structure of the interfaces of the InxGa1 − x As quantum well from X-ray diffraction data. Crystallography Reports, 46 (5) 707-716 doi:10.1134/1.1405854
 
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