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Gretchel, R., Kagadei, V. A., Lebedeva, N. I., Proskurovskii, D. I., Yankelevich, E. B. (1989) ?Reverse? annealing mechanism in ion-doped silicon layers subjected to electron beam heating. Soviet Physics Journal, 32. 662-666 doi:10.1007/bf00898546

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Reference TypeJournal (article/letter/editorial)
Title?Reverse? annealing mechanism in ion-doped silicon layers subjected to electron beam heating
JournalSoviet Physics Journal
AuthorsGretchel, R.Author
Kagadei, V. A.Author
Lebedeva, N. I.Author
Proskurovskii, D. I.Author
Yankelevich, E. B.Author
Year1989 (August)Volume32
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00898546Search in ResearchGate
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Mindat Ref. ID6193762Long-form Identifiermindat:1:5:6193762:0
GUID0
Full ReferenceGretchel, R., Kagadei, V. A., Lebedeva, N. I., Proskurovskii, D. I., Yankelevich, E. B. (1989) ?Reverse? annealing mechanism in ion-doped silicon layers subjected to electron beam heating. Soviet Physics Journal, 32. 662-666 doi:10.1007/bf00898546
Plain TextGretchel, R., Kagadei, V. A., Lebedeva, N. I., Proskurovskii, D. I., Yankelevich, E. B. (1989) ?Reverse? annealing mechanism in ion-doped silicon layers subjected to electron beam heating. Soviet Physics Journal, 32. 662-666 doi:10.1007/bf00898546
In(1989) Soviet Physics Journal Vol. 32. Springer Science and Business Media LLC

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