Lo, C.F., Johnson, K.H., Adler, D. (1988) Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method. Journal of Non-Crystalline Solids, 99 (1) 97-103 doi:10.1016/0022-3093(88)90461-9
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method | ||
Journal | Journal of Non-Crystalline Solids | ||
Authors | Lo, C.F. | Author | |
Johnson, K.H. | Author | ||
Adler, D. | Author | ||
Year | 1988 (January) | Volume | 99 |
Issue | 1 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/0022-3093(88)90461-9Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 628204 | Long-form Identifier | mindat:1:5:628204:6 |
GUID | 0 | ||
Full Reference | Lo, C.F., Johnson, K.H., Adler, D. (1988) Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method. Journal of Non-Crystalline Solids, 99 (1) 97-103 doi:10.1016/0022-3093(88)90461-9 | ||
Plain Text | Lo, C.F., Johnson, K.H., Adler, D. (1988) Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method. Journal of Non-Crystalline Solids, 99 (1) 97-103 doi:10.1016/0022-3093(88)90461-9 | ||
In | (1988, January) Journal of Non-Crystalline Solids Vol. 99 (1) Elsevier BV |
See Also
These are possibly similar items as determined by title/reference text matching only.