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Babras, Suvarna, Rajarshi, S.V., Dusane, R.O., Bhide, V.G., Kshirsagar, S.T. (1990) Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 119 (3) 342-346 doi:10.1016/0022-3093(90)90307-8

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Reference TypeJournal (article/letter/editorial)
TitleEffect of rf power on the structure and related gap states in hydrogenated amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsBabras, SuvarnaAuthor
Rajarshi, S.V.Author
Dusane, R.O.Author
Bhide, V.G.Author
Kshirsagar, S.T.Author
Year1990 (May)Volume119
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(90)90307-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID629725Long-form Identifiermindat:1:5:629725:5
GUID0
Full ReferenceBabras, Suvarna, Rajarshi, S.V., Dusane, R.O., Bhide, V.G., Kshirsagar, S.T. (1990) Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 119 (3) 342-346 doi:10.1016/0022-3093(90)90307-8
Plain TextBabras, Suvarna, Rajarshi, S.V., Dusane, R.O., Bhide, V.G., Kshirsagar, S.T. (1990) Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 119 (3) 342-346 doi:10.1016/0022-3093(90)90307-8
In(1990, May) Journal of Non-Crystalline Solids Vol. 119 (3) Elsevier BV

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Dusane, R.O., Dusane, S.R., Bhide, V.G., Kshirsagar, S.T. (1991) Effect of local structural order on the doping in hydrogenated amorphous silicon (a - Si : H) Journal of Non-Crystalline Solids, 137. 115-118 doi:10.1016/s0022-3093(05)80070-5
Lucovsky, G., Jing, Z. (1996) Defect metastability associated with oxygen and nitrogen impurity atoms in hydrogenated amorphous silicon films. Journal of Non-Crystalline Solids, 198. 342-346 doi:10.1016/0022-3093(95)00700-8
Bhusari, D.M., Dusane, R.O., Kshirsagar, S.T. (1991) Properties of a-Si1-xCx:H alloys deposited in the hot-plasma - Box glow discharge reactor. Journal of Non-Crystalline Solids, 137. 689-692 doi:10.1016/s0022-3093(05)80214-5
Sridhar, R., Venkattasubbiah, R., Majhi, J., Ramachandran, R. (1990) Thickness dependence of optical properties of hydrogenated amorphous silicon films. Journal of Non-Crystalline Solids, 119 (3) 331-341 doi:10.1016/0022-3093(90)90306-7
Pankove, J.I, Pollak, Fred H, Schnabolk, C (1980) Optical absorption by GAP states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 35. 459-462 doi:10.1016/0022-3093(80)90637-7
Bhide, R. S., Manorama, V., Pawar, S. K., Babras, Suvarna, Bhoraskar, S. V., Bhide, V. G. (1990) Light‐induced defect studies in hydrogenated amorphous silicon by exoelectron emission. Applied Physics Letters, 57 (15). 1528-1530 doi:10.1063/1.103342
Imagawa, O, Iwanishi, M, Yokoyama, S, Shimakawa, K (1985) Electrophotographic spectroscopy of gap states in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 77. 359-362 doi:10.1016/0022-3093(85)90675-1
Lucovsky, G., Jing, Z., Lu, Z., Lee, D.R., Whitten, J.L. (1995) Properties of bonded hydrogen in hydrogenated amorphous silicon and other hydrogenated amorphous silicon alloys. Journal of Non-Crystalline Solids, 182 (1) 90-102 doi:10.1016/0022-3093(94)00578-8
Popescu, Mihai A. (1995) The medium-range structure of amorphous hydrogenated silicon. Journal of Non-Crystalline Solids, 192. 140-144 doi:10.1016/0022-3093(95)00342-8
Sharma, S.K., Jain, S.C., Aggarwal, S.S., Bhide, V.G. (1972) Structure and electrical resistivity of thin amorphous germanium films. Journal of Non-Crystalline Solids, 7 (3) 285-294 doi:10.1016/0022-3093(72)90029-4
Dusane, R. O., Dusane, Suvarna R., Bhide, V. G., Kshirsagar, S. T. (1993) Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition method. Applied Physics Letters, 63 (16). 2201-2203 doi:10.1063/1.110801
 
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