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Evangelisti, F. (1993) Atomic and electronic structure of a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 164. 1009-1014 doi:10.1016/0022-3093(93)91169-4

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Reference TypeJournal (article/letter/editorial)
TitleAtomic and electronic structure of a-Si1−xCx:H alloys
JournalJournal of Non-Crystalline Solids
AuthorsEvangelisti, F.Author
Year1993 (December)Volume164
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(93)91169-4Search in ResearchGate
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Mindat Ref. ID633545Long-form Identifiermindat:1:5:633545:2
GUID0
Full ReferenceEvangelisti, F. (1993) Atomic and electronic structure of a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 164. 1009-1014 doi:10.1016/0022-3093(93)91169-4
Plain TextEvangelisti, F. (1993) Atomic and electronic structure of a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 164. 1009-1014 doi:10.1016/0022-3093(93)91169-4
In(1993) Journal of Non-Crystalline Solids Vol. 164. Elsevier BV

See Also

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Xanthakis, J.P. (1993) Electronic structure and band - gap study of Si1−xCx. Journal of Non-Crystalline Solids, 164. 1019-1022 doi:10.1016/0022-3093(93)91171-x
Sotiropoulos, J, Fuhs, W, Nickel, N (1993) Structure and optical properties of a-Si1−xNx:H alloys. Journal of Non-Crystalline Solids, 164. 881-884 doi:10.1016/0022-3093(93)91138-s
Sotiropoulos, Jannis, Weiser, Gerhard (1987) Correlation of structure and optical properties of a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 97. 1087-1090 doi:10.1016/0022-3093(87)90261-4
Wang, F., Schwarz, R. (1993) Characterization of optoelectronic properties of a-Si1−C :H films. Journal of Non-Crystalline Solids, 164. 1039-1042 doi:10.1016/0022-3093(93)91176-4
Patriarca, F., Sebastiani, M., Wang, S.L., Chambouleyron, I., Evangelisti, F. (1993) Electronic states of a-Si:H upon Cs adsorption and deep defect creation. Journal of Non-Crystalline Solids, 164. 833-836 doi:10.1016/0022-3093(93)91126-n
Wiech, G., Langer, H., Lepa, U., Šimůnek, A. (1993) Si K-, Si L- and C K-emission bands and electronic structure of amorphous Si1−xCx: H alloys. Journal of Non-Crystalline Solids, 164. 1023-1026 doi:10.1016/0022-3093(93)91172-y
Bertomeu, J., Puigdollers, J., Asensi, J.M., Andreu, J. (1993) On the determination of the interface density of states in aSi:H/aSi1−XCX:H multilayers. Journal of Non-Crystalline Solids, 164. 861-864 doi:10.1016/0022-3093(93)91133-n
De Seta, M., Wang, S.L., Narducci, P., Evangelisti, F. (1991) Nature of valence states of a-Si1−xCx:H alloys in the low carbon concentration limit. Journal of Non-Crystalline Solids, 137. 851-854 doi:10.1016/s0022-3093(05)80253-4
(1993) Editorial Board. Journal of Non-Crystalline Solids, 164. doi:10.1016/0022-3093(93)90477-f
Agrawal, Bal K., Yadav, P.S., Ghosh, B.K. (1989) Vibrational excitations in a-Si1−xCx:H alloys. Journal of Non-Crystalline Solids, 114. 519-521 doi:10.1016/0022-3093(89)90636-4
Evangelisti, F, Seta, M De (1993) Electronic structure of a-Si1-xCx:H alloys. Journal of Physics: Condensed Matter, 5 (33). doi:10.1088/0953-8984/5/33a/120
 
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