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Chen, Kai, Chen, Kunji, Zhang, Lin, Huang, Xinfan (2004) The constrained growth of uniform nc-Si grains from a-SiNx/a-Si:H/a-SiNx: mechanism and experiments. Journal of Non-Crystalline Solids, 338. 131-134 doi:10.1016/j.jnoncrysol.2004.02.037

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Reference TypeJournal (article/letter/editorial)
TitleThe constrained growth of uniform nc-Si grains from a-SiNx/a-Si:H/a-SiNx: mechanism and experiments
JournalJournal of Non-Crystalline Solids
AuthorsChen, KaiAuthor
Chen, KunjiAuthor
Zhang, LinAuthor
Huang, XinfanAuthor
Year2004 (June)Volume338
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2004.02.037Search in ResearchGate
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Mindat Ref. ID642102Long-form Identifiermindat:1:5:642102:5
GUID0
Full ReferenceChen, Kai, Chen, Kunji, Zhang, Lin, Huang, Xinfan (2004) The constrained growth of uniform nc-Si grains from a-SiNx/a-Si:H/a-SiNx: mechanism and experiments. Journal of Non-Crystalline Solids, 338. 131-134 doi:10.1016/j.jnoncrysol.2004.02.037
Plain TextChen, Kai, Chen, Kunji, Zhang, Lin, Huang, Xinfan (2004) The constrained growth of uniform nc-Si grains from a-SiNx/a-Si:H/a-SiNx: mechanism and experiments. Journal of Non-Crystalline Solids, 338. 131-134 doi:10.1016/j.jnoncrysol.2004.02.037
In(2004) Journal of Non-Crystalline Solids Vol. 338. Elsevier BV

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Zhang, Lin, Chen, Kai, Wang, Li, Li, Wei, Xu, Jun, Huang, Xinfan, Chen, Kunji (2002) The dependence of the interface and shape on the constrained growth of nc-Si in a-SiNx/a-Si:H/a-SiNxstructures. Journal of Physics: Condensed Matter, 14 (43). 10083-10091 doi:10.1088/0953-8984/14/43/307
Chen, Kunji, Ma, Zhongyuan, Huang, Xinfan, Xu, Jun, Li, Wei, Sui, Yanping, Mei, Jiaxin, Zhu, Da (2004) Comparison between light emission from Si/SiNX and Si/SiO2 multilayers: role of interface states. Journal of Non-Crystalline Solids, 338. 448-451 doi:10.1016/j.jnoncrysol.2004.03.016
Dai, Min, Chen, Kai, Huang, Xinfan, Wu, Liangcai, Zhang, Lin, Qiao, Feng, Li, Wei, Chen, Kunji (2004) Formation and charging effect of Si nanocrystals in a-SiNx/a-Si/a-SiNx structures. Journal of Applied Physics, 95 (2). 640-645 doi:10.1063/1.1633649
Huang, Xinfan, Wu, Liangcai, Dai, Min, Han, Peigao, Yu, Linwei, Ma, Zhongyuan, Liu, Yansong, Li, Wei, Chen, Kunji (2006) Charging and Coulomb blockade effects of the nc-Si embedded in SiNx double-barrier structures. Journal of Non-Crystalline Solids, 352 (9) 1126-1129 doi:10.1016/j.jnoncrysol.2005.11.097
CHEN, KUNJI, CHEN, KAI, HAN, PEIGAO, ZOU, HECHENG, MA, ZHONGYUAN, HUANG, XINFAN (2005) THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL. International Journal of Modern Physics B, 19 (15). 2751-2756 doi:10.1142/s021797920503164x
Wu, Liangcai, Dai, Min, Huang, Xinfan, Zhang, Yongjun, Li, Wei, Xu, Jun, Chen, Kunji (2004) Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structure. Journal of Non-Crystalline Solids, 338. 318-321 doi:10.1016/j.jnoncrysol.2004.02.064
Chen, Kunji, Qin, Hua, Huang, Xinfan, Ikuta, Kazuyuki, Matsuda, Akihisa, Tanaka, Kazunobu (1996) The effect of hydrogen species on the electronic properties of nc-Si:H prepared in a triode PECVD system. Journal of Non-Crystalline Solids, 198. 891-894 doi:10.1016/0022-3093(96)00077-4
Chen, Kunji, Wang, Mingxiang, Shi, Weihua, Jiang, Lai, Li, Wei, Xu, Jun, Huang, Xinfan (1996) Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures. Journal of Non-Crystalline Solids, 198. 833-836 doi:10.1016/0022-3093(96)00058-0
Rui, Yunjun, Chen, Deyuan, Xu, Jun, Li, Wei, Cen, Zhanhong, Huang, Xinfan, Chen, Kunji (2007) Effects of hydrogen plasma annealing on the luminescence from a-Si:H/SiO2 and nc-Si/SiO2 multilayers. Applied Surface Science, 253. 8647-8651 doi:10.1016/j.apsusc.2007.04.058
Zhang, S., Liao, X., Xu, Y., Martins, R., Fortunato, E., Kong, G. (2004) The diphasic nc-Si/a-Si:H thin film with improved medium-range order. Journal of Non-Crystalline Solids, 338. 188-191 doi:10.1016/j.jnoncrysol.2004.02.050
Huang, Xinfan, Wang, Li, Li, Jian, Li, Wei, Jiang, Ming, Xu, Jun, Chen, Kunji (2000) Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers. Journal of Non-Crystalline Solids, 266. 1015-1020 doi:10.1016/s0022-3093(00)00040-5
 
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