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Juška, G., Nekrašas, N., Arlauskas, K., Stuchlik, J., Fejfar, A., Kočka, J. (2004) Photogenerated carriers in μc-Si:H/a-Si:H multi-layers. Journal of Non-Crystalline Solids, 338. 353-356 doi:10.1016/j.jnoncrysol.2004.02.072

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Reference TypeJournal (article/letter/editorial)
TitlePhotogenerated carriers in μc-Si:H/a-Si:H multi-layers
JournalJournal of Non-Crystalline Solids
AuthorsJuška, G.Author
Nekrašas, N.Author
Arlauskas, K.Author
Stuchlik, J.Author
Fejfar, A.Author
Kočka, J.Author
Year2004 (June)Volume338
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2004.02.072Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID642137Long-form Identifiermindat:1:5:642137:7
GUID0
Full ReferenceJuška, G., Nekrašas, N., Arlauskas, K., Stuchlik, J., Fejfar, A., Kočka, J. (2004) Photogenerated carriers in μc-Si:H/a-Si:H multi-layers. Journal of Non-Crystalline Solids, 338. 353-356 doi:10.1016/j.jnoncrysol.2004.02.072
Plain TextJuška, G., Nekrašas, N., Arlauskas, K., Stuchlik, J., Fejfar, A., Kočka, J. (2004) Photogenerated carriers in μc-Si:H/a-Si:H multi-layers. Journal of Non-Crystalline Solids, 338. 353-356 doi:10.1016/j.jnoncrysol.2004.02.072
In(2004) Journal of Non-Crystalline Solids Vol. 338. Elsevier BV

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Juška, G., Nekrašas, N., Stuchlik, I., Arlauskas, K., Viliūnas, M., Kočka, J. (2002) Features of Charge Carrier Transport in μc-Si:H/a-Si:H Superlattices. Materials Science Forum, 384. 301-304 doi:10.4028/www.scientific.net/msf.384-385.301
Juška, G., Arlauskas, K., Nekrašas, N., Stuchlik, J., Niquille, X., Wyrsch, N. (2002) Features of charge carrier transport determined from carrier extraction current in μc-Si:H. Journal of Non-Crystalline Solids, 299. 375-379 doi:10.1016/s0022-3093(01)01183-8
Juška, G, Genevičius, K, Viliunas, M, Arlauskas, K, Stuchlı́ková, H, Fejfar, A, Kočka, J (2000) New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flight. Journal of Non-Crystalline Solids, 266. 331-335 doi:10.1016/s0022-3093(99)00720-6
Juška, G., Kočka, J., Viliũnas, M., Arlauskas, K. (1993) Subnanosecond bimolecular non-radiative recombination in a-Si:H. Journal of Non-Crystalline Solids, 164. 579-582 doi:10.1016/0022-3093(93)90618-8
Juška, G., Arlauskas, K., Kočka, J. (1996) Electric field heated electrons in a-Si:H — new features. Journal of Non-Crystalline Solids, 198. 202-205 doi:10.1016/0022-3093(95)00687-7
Juška, G., Arlauskas, K., Genevičius, K., Kočka, J. (1998) Charge Carrier Transport in μc-Si:H. Materials Science Forum, 297. 327-332 doi:10.4028/www.scientific.net/msf.297-298.327
Juška, G., Viliūnas, M., Arlauskas, K., Nekrašas, N., Wyrsch, N., Feitknecht, L. (2001) Hole drift mobility in μc-Si:H. Journal of Applied Physics, 89 (9). 4971-4974 doi:10.1063/1.1359436
Nekrašas, N., Sliaužys, G., Juška, G., Arlauskas, K., Stuchlik, J., Kočka, J. (2005) Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon. Acta Physica Polonica A, 107 (2). 373-376 doi:10.12693/aphyspola.107.373
Juška, G., Viliūnas, M., Arlauskas, K., Stuchlík, J., Kočka, J. (1999) Ultrafast Charge Carrier Recombination in a-Si:H and μc-Si:H. physica status solidi (a), 171 (2). 539-547 doi:10.1002/(sici)1521-396x(199902)171:2<539::aid-pssa539>3.0.co;2-8
Kočka, J, Stuchlı́ková, H, Fejfar, A, Ganguly, G, Sakata, I, Matsuda, A, Juška, G (1998) Reexamination of high drift mobility a-Si:H. Journal of Non-Crystalline Solids, 227. 229-232 doi:10.1016/s0022-3093(98)00059-3
Juška, G., Jukonis, G., Kočka, J. (1989) Study of A-Si:H drift mobility in subnanosecond time scale. Journal of Non-Crystalline Solids, 114. 354-356 doi:10.1016/0022-3093(89)90161-0
 
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