Reference Type | Journal (article/letter/editorial) |
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Title | Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms |
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Journal | Surface Science |
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Authors | Owen, J.H.G. | Author |
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Miki, K. | Author |
Bowler, D.R. | Author |
Goringe, C.M. | Author |
Goldfarb, I. | Author |
Briggs, G.A.D. | Author |
Year | 1997 (December) | Volume | 394 |
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Issue | 1 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/s0039-6028(97)00592-xSearch in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6471602 | Long-form Identifier | mindat:1:5:6471602:8 |
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GUID | 0 |
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Full Reference | Owen, J.H.G., Miki, K., Bowler, D.R., Goringe, C.M., Goldfarb, I., Briggs, G.A.D. (1997) Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms. Surface Science, 394 (1). 79-90 doi:10.1016/s0039-6028(97)00592-x |
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Plain Text | Owen, J.H.G., Miki, K., Bowler, D.R., Goringe, C.M., Goldfarb, I., Briggs, G.A.D. (1997) Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms. Surface Science, 394 (1). 79-90 doi:10.1016/s0039-6028(97)00592-x |
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In | (1997, December) Surface Science Vol. 394 (1) Elsevier BV |
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