Reference Type | Journal (article/letter/editorial) |
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Title | Current issues in the physics of heavily doped semiconductors at the metal–insulator transition |
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Journal | Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences |
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Authors | von Löhneysen, H. | Author |
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Year | 1998 (January 15) | Volume | 356 |
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Issue | 1735 |
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Publisher | The Royal Society |
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DOI | doi:10.1098/rsta.1998.0154Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 659322 | Long-form Identifier | mindat:1:5:659322:7 |
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GUID | 0 |
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Full Reference | von Löhneysen, H. (1998) Current issues in the physics of heavily doped semiconductors at the metal–insulator transition. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 356 (1735) 139-156 doi:10.1098/rsta.1998.0154 |
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Plain Text | von Löhneysen, H. (1998) Current issues in the physics of heavily doped semiconductors at the metal–insulator transition. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 356 (1735) 139-156 doi:10.1098/rsta.1998.0154 |
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In | (1998, January) Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences Vol. 356 (1735) The Royal Society |
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