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von Löhneysen, H. (1998) Current issues in the physics of heavily doped semiconductors at the metal–insulator transition. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 356 (1735) 139-156 doi:10.1098/rsta.1998.0154

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Reference TypeJournal (article/letter/editorial)
TitleCurrent issues in the physics of heavily doped semiconductors at the metal–insulator transition
JournalPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Authorsvon Löhneysen, H.Author
Year1998 (January 15)Volume356
Issue1735
PublisherThe Royal Society
DOIdoi:10.1098/rsta.1998.0154Search in ResearchGate
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Mindat Ref. ID659322Long-form Identifiermindat:1:5:659322:7
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Full Referencevon Löhneysen, H. (1998) Current issues in the physics of heavily doped semiconductors at the metal–insulator transition. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 356 (1735) 139-156 doi:10.1098/rsta.1998.0154
Plain Textvon Löhneysen, H. (1998) Current issues in the physics of heavily doped semiconductors at the metal–insulator transition. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 356 (1735) 139-156 doi:10.1098/rsta.1998.0154
In(1998, January) Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences Vol. 356 (1735) The Royal Society


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