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Sun, Xiaoming, Li, Yadong (2004) Ga2O3 and GaN Semiconductor Hollow Spheres. Angewandte Chemie, 116 (29). 3915-3919 doi:10.1002/ange.200353212

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Reference TypeJournal (article/letter/editorial)
TitleGa2O3 and GaN Semiconductor Hollow Spheres
JournalAngewandte Chemie
AuthorsSun, XiaomingAuthor
Li, YadongAuthor
Year2004 (July 19)Volume116
Issue29
PublisherWiley
DOIdoi:10.1002/ange.200353212Search in ResearchGate
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Mindat Ref. ID7301612Long-form Identifiermindat:1:5:7301612:4
GUID0
Full ReferenceSun, Xiaoming, Li, Yadong (2004) Ga2O3 and GaN Semiconductor Hollow Spheres. Angewandte Chemie, 116 (29). 3915-3919 doi:10.1002/ange.200353212
Plain TextSun, Xiaoming, Li, Yadong (2004) Ga2O3 and GaN Semiconductor Hollow Spheres. Angewandte Chemie, 116 (29). 3915-3919 doi:10.1002/ange.200353212
In(2004, July) Angewandte Chemie Vol. 116 (29) Wiley

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Sun, Xiaoming, Li, Yadong (2004) Ga2O3 and GaN Semiconductor Hollow Spheres. Angewandte Chemie International Edition, 43 (29). 3827-3831 doi:10.1002/anie.200353212
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