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Muto, Shunsuke, Enomoto, Naruaki (2005) Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy. MATERIALS TRANSACTIONS, 46 (10). 2117-2124 doi:10.2320/matertrans.46.2117

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Reference TypeJournal (article/letter/editorial)
TitleSubstructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy
JournalMATERIALS TRANSACTIONS
AuthorsMuto, ShunsukeAuthor
Enomoto, NaruakiAuthor
Year2005Volume46
Issue10
PublisherJapan Institute of Metals
DOIdoi:10.2320/matertrans.46.2117Search in ResearchGate
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Mindat Ref. ID7777800Long-form Identifiermindat:1:5:7777800:0
GUID0
Full ReferenceMuto, Shunsuke, Enomoto, Naruaki (2005) Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy. MATERIALS TRANSACTIONS, 46 (10). 2117-2124 doi:10.2320/matertrans.46.2117
Plain TextMuto, Shunsuke, Enomoto, Naruaki (2005) Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy. MATERIALS TRANSACTIONS, 46 (10). 2117-2124 doi:10.2320/matertrans.46.2117
In(2005) MATERIALS TRANSACTIONS Vol. 46 (10) Japan Institute of Metals


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