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Yoshida, M., Uemura, S., Kodzasa, T., Kamata, T., Matsuzawa, M., Kawai, T. (2003) Surface Potential Control of an Insulator Layer for the High Performance Organic FET. Synthetic Metals, 137 (1). 967-968 doi:10.1016/s0379-6779(02)00958-x

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Reference TypeJournal (article/letter/editorial)
TitleSurface Potential Control of an Insulator Layer for the High Performance Organic FET
JournalSynthetic Metals
AuthorsYoshida, M.Author
Uemura, S.Author
Kodzasa, T.Author
Kamata, T.Author
Matsuzawa, M.Author
Kawai, T.Author
Year2003 (April)Volume137
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0379-6779(02)00958-xSearch in ResearchGate
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Mindat Ref. ID7797910Long-form Identifiermindat:1:5:7797910:4
GUID0
Full ReferenceYoshida, M., Uemura, S., Kodzasa, T., Kamata, T., Matsuzawa, M., Kawai, T. (2003) Surface Potential Control of an Insulator Layer for the High Performance Organic FET. Synthetic Metals, 137 (1). 967-968 doi:10.1016/s0379-6779(02)00958-x
Plain TextYoshida, M., Uemura, S., Kodzasa, T., Kamata, T., Matsuzawa, M., Kawai, T. (2003) Surface Potential Control of an Insulator Layer for the High Performance Organic FET. Synthetic Metals, 137 (1). 967-968 doi:10.1016/s0379-6779(02)00958-x
In(2003, April) Synthetic Metals Vol. 137 (1) Elsevier BV

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Yoshida, M., Uemura, S., Kodzasa, T., Ushijima, H., Kamata, T. (2003) High Performance Organic FET with Double-Semiconductor Layers. Synthetic Metals, 137 (1). 893-894 doi:10.1016/s0379-6779(02)01129-3
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