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Yamada, Hironori, Matsuo, Yasumitsu, Hatori, Junko, Czapla, Zbigniew, Ikehata, Seiichiro (2005) Fabrication of field effect transistor based on deuterated glycinium phosphite crystal and pentacene. Synthetic Metals, 153 (1). 305-308 doi:10.1016/j.synthmet.2005.07.186

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of field effect transistor based on deuterated glycinium phosphite crystal and pentacene
JournalSynthetic Metals
AuthorsYamada, HironoriAuthor
Matsuo, YasumitsuAuthor
Hatori, JunkoAuthor
Czapla, ZbigniewAuthor
Ikehata, SeiichiroAuthor
Year2005 (September)Volume153
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.synthmet.2005.07.186Search in ResearchGate
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Mindat Ref. ID7799288Long-form Identifiermindat:1:5:7799288:6
GUID0
Full ReferenceYamada, Hironori, Matsuo, Yasumitsu, Hatori, Junko, Czapla, Zbigniew, Ikehata, Seiichiro (2005) Fabrication of field effect transistor based on deuterated glycinium phosphite crystal and pentacene. Synthetic Metals, 153 (1). 305-308 doi:10.1016/j.synthmet.2005.07.186
Plain TextYamada, Hironori, Matsuo, Yasumitsu, Hatori, Junko, Czapla, Zbigniew, Ikehata, Seiichiro (2005) Fabrication of field effect transistor based on deuterated glycinium phosphite crystal and pentacene. Synthetic Metals, 153 (1). 305-308 doi:10.1016/j.synthmet.2005.07.186
In(2005, September) Synthetic Metals Vol. 153 (1) Elsevier BV

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