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Shimozaki, Toshitada, Okino, Takahisa, Yamane, Masahiro (1997) Oxygen Penetration into GaALAs LED Surface due to Light Irradiation. Journal of the Japan Institute of Metals, 61 (11). 1268-1269 doi:10.2320/jinstmet1952.61.11_1268

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Reference TypeJournal (article/letter/editorial)
TitleOxygen Penetration into GaALAs LED Surface due to Light Irradiation
JournalJournal of the Japan Institute of Metals
AuthorsShimozaki, ToshitadaAuthor
Okino, TakahisaAuthor
Yamane, MasahiroAuthor
Year1997Volume61
Issue11
PublisherJapan Institute of Metals
DOIdoi:10.2320/jinstmet1952.61.11_1268Search in ResearchGate
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Mindat Ref. ID7814344Long-form Identifiermindat:1:5:7814344:1
GUID0
Full ReferenceShimozaki, Toshitada, Okino, Takahisa, Yamane, Masahiro (1997) Oxygen Penetration into GaALAs LED Surface due to Light Irradiation. Journal of the Japan Institute of Metals, 61 (11). 1268-1269 doi:10.2320/jinstmet1952.61.11_1268
Plain TextShimozaki, Toshitada, Okino, Takahisa, Yamane, Masahiro (1997) Oxygen Penetration into GaALAs LED Surface due to Light Irradiation. Journal of the Japan Institute of Metals, 61 (11). 1268-1269 doi:10.2320/jinstmet1952.61.11_1268
In(1997) Journal of the Japan Institute of Metals Vol. 61 (11) Japan Institute of Metals

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Shimozaki, Toshitada, Okino, Takahisa, Yamane, Masahiro, Wakamatsu, Yoshinori, Onishi, Masami (1997) Effect of Impurities on Growth of Ti Silicides in Bulk Ti/Si Diffusion Couple. Materials Transactions, JIM, 38. 865-870 doi:10.2320/matertrans1989.38.865
Kim, Keun-Soo, Shimozaki, Toshitada, Okino, Takahisa, Lee, Chan-Gyu (2000) Reactive Diffusion in Bulk Co/Si Diffusion Couple. Journal of the Japan Institute of Metals, 64 (9). 771-775 doi:10.2320/jinstmet1952.64.9_771
Shimozaki, Toshitada, Okino, Takahisa, Yamane, Masahiro, Lee, Chan-Gyu (1999) The Role of Iron in Ti on the Growth of Ti Silicides in Bulk Ti/Si Diffusion Couples. Materials Transactions, JIM, 40. 612-617 doi:10.2320/matertrans1989.40.612
Okino, Takahisa, Shimozaki, Toshitada (1999) Analysis of Dopant Diffusion in Si with Stacking Faults. Materials Transactions, JIM, 40. 474-478 doi:10.2320/matertrans1989.40.474
Shimozaki, Toshitada, Wakamatsu, Yoshinori, Onishi, Masami (1988) Numerical Analysis of the Concentration-Penetration Profile in Multiple Phase Diffusion Couple. Journal of the Japan Institute of Metals, 52 (7). 639-645 doi:10.2320/jinstmet1952.52.7_639
Shimozaki, Toshitada, Onishi, Masami (1978) Interdiffusion Coefficients in ε Phase of the Ag-Zn system. Journal of the Japan Institute of Metals, 42 (11). 1083-1089 doi:10.2320/jinstmet1952.42.11_1083
Onishi, Masami, Wakamatsu, Yoshinori, Shimozaki, Toshitada (1979) Reaction Diffusion. Bulletin of the Japan Institute of Metals, 18. 174-177 doi:10.2320/materia1962.18.174
Shimozaki, Toshitada, Onishi, Masami (1981) On the Reversed Concentration Layer Formed in Ni-Zn Reaction Diffusion Couples. Journal of the Japan Institute of Metals, 45 (11). 1221-1222 doi:10.2320/jinstmet1952.45.11_1221
Onishi, Masami, Lee, Chan Gue, Yoon, Jae-Hong, Shimozaki, Toshitada (1998) Interfacial Reaction and Local Equilibrium for Moving Phase Boundary due to Binary Reaction Diffusion. Journal of the Japan Institute of Metals, 62 (6). 505-509 doi:10.2320/jinstmet1952.62.6_505
Shimozaki, Toshitada, Hirai, Akira, Okino, Takahisa, Lee, Chan-Gyu (2001) Reactive Diffusion between Ultra High Purity Iron and Silicon Wafer. MATERIALS TRANSACTIONS, 42 (4). 691-696 doi:10.2320/matertrans.42.691
Shimozaki, Toshitada, Onishi, Masami (1978) Study on Reaction Diffusion in the Nickel-Zinc System. Journal of the Japan Institute of Metals, 42 (4). 402-409 doi:10.2320/jinstmet1952.42.4_402
 
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