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Chen, Guang, Song, Cheng, Pan, Feng (2013) Improved resistive switching stability of Pt/ZnO/CoO x /ZnO/Pt structure for nonvolatile memory devices. Rare Metals, 32. 544-549 doi:10.1007/s12598-013-0080-7

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Reference TypeJournal (article/letter/editorial)
TitleImproved resistive switching stability of Pt/ZnO/CoO x /ZnO/Pt structure for nonvolatile memory devices
JournalRare Metals
AuthorsChen, GuangAuthor
Song, ChengAuthor
Pan, FengAuthor
Year2013 (December)Volume32
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s12598-013-0080-7Search in ResearchGate
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Mindat Ref. ID8049642Long-form Identifiermindat:1:5:8049642:5
GUID0
Full ReferenceChen, Guang, Song, Cheng, Pan, Feng (2013) Improved resistive switching stability of Pt/ZnO/CoO x /ZnO/Pt structure for nonvolatile memory devices. Rare Metals, 32. 544-549 doi:10.1007/s12598-013-0080-7
Plain TextChen, Guang, Song, Cheng, Pan, Feng (2013) Improved resistive switching stability of Pt/ZnO/CoO x /ZnO/Pt structure for nonvolatile memory devices. Rare Metals, 32. 544-549 doi:10.1007/s12598-013-0080-7
In(2013) Rare Metals Vol. 32. Springer Science and Business Media LLC

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Chen, Xinman, Wu, Guangheng, Bao, Dinghua (2008) Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications. Applied Physics Letters, 93 (9). 93501pp. doi:10.1063/1.2978158
Yang, Y. C., Pan, F., Zeng, F., Liu, M. (2009) Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization. Journal of Applied Physics, 106 (12). 123705pp. doi:10.1063/1.3273329
Chen, Guang, Song, Cheng, Chen, Chao, Gao, Shuang, Zeng, Fei, Pan, Feng (2012) Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO. Advanced Materials, 24. 3515-3520 doi:10.1002/adma.201201595
Yang, Min-Li (2013) Potentiostatic deposition of differently shaped Pt and PtBi nanoparticles. Rare Metals, 32. 375-379 doi:10.1007/s12598-013-0105-2
Chen, C., Yang, Y. C., Zeng, F., Pan, F. (2010) Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device. Applied Physics Letters, 97 (8). 83502pp. doi:10.1063/1.3483158
Chen, Xinman, Hu, Wei, Wu, Shuxiang, Bao, Dinghua (2014) Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current. Applied Physics Letters, 104 (4). 43508pp. doi:10.1063/1.4863744
Yang, Min Kyu, Park, Jae-Wan, Ko, Tae Kuk, Lee, Jeon-Kook (2009) Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices. Applied Physics Letters, 95 (4). 42105pp. doi:10.1063/1.3191674
Farooq, M. Hassan, Yang, Hai-Ling, Xu, Xiao-Guang, Ran, Cong-Jun, Miao, Jun, Rafique, M. Yasir, Pan, Li-Qing, Jiang, Yong (2013) Room temperature ferromagnetism of Si-doped ZnO thin films prepared by sol–gel method. Rare Metals, 32. 165-168 doi:10.1007/s12598-013-0048-7
Gao, Shuang, Zeng, Fei, Li, Fan, Wang, Minjuan, Mao, Haijun, Wang, Guangyue, Song, Cheng, Pan, Feng (2015) Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale, 7. 6031-6038 doi:10.1039/c4nr06406b
Li, Qi, Fu, Su-Lei, Song, Cheng, Wang, Guang-Yue, Zeng, Fei, Pan, Feng (2018) Improved resistance to electromigration and acoustomigration of Al interdigital transducers by Ni underlayer. Rare Metals, 37. 823-830 doi:10.1007/s12598-018-1050-x
Zhao, Hong-Bin, Tu, Hai-Ling, Wei, Feng, Zhang, Xin-Qiang, Xiong, Yu-Hua, Du, Jun (2014) Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition. Rare Metals, 33. 75-79 doi:10.1007/s12598-013-0159-1
 
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