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Häusler, Jonas, Schimmel, Saskia, Wellmann, Peter, Schnick, Wolfgang (2017) Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23 (50). 12275-12282 doi:10.1002/chem.201701081

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Reference TypeJournal (article/letter/editorial)
TitleAmmonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging
JournalChemistry - A European Journal
AuthorsHäusler, JonasAuthor
Schimmel, SaskiaAuthor
Wellmann, PeterAuthor
Schnick, WolfgangAuthor
Year2017 (September 7)Volume23
Issue50
PublisherWiley
DOIdoi:10.1002/chem.201701081Search in ResearchGate
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Mindat Ref. ID8271330Long-form Identifiermindat:1:5:8271330:8
GUID0
Full ReferenceHäusler, Jonas, Schimmel, Saskia, Wellmann, Peter, Schnick, Wolfgang (2017) Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23 (50). 12275-12282 doi:10.1002/chem.201701081
Plain TextHäusler, Jonas, Schimmel, Saskia, Wellmann, Peter, Schnick, Wolfgang (2017) Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23 (50). 12275-12282 doi:10.1002/chem.201701081
In(2017, September) Chemistry - A European Journal Vol. 23 (50) Wiley


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