Smith, M. J. (1962) DETERMINATION OF THE NONSTOICHIOMETRIC DOPING MECHANISM IN Bi2Se3. Applied Physics Letters, 1 (4). 79-81 doi:10.1063/1.1753705

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Reference Type	Journal (article/letter/editorial)
Title	DETERMINATION OF THE NONSTOICHIOMETRIC DOPING MECHANISM IN Bi2Se3
Journal	Applied Physics Letters
Authors	Smith, M. J.		Author
Year	1962 (December)	Volume	1
Issue	4
Publisher	AIP Publishing
DOI	doi:10.1063/1.1753705Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8449281	Long-form Identifier	mindat:1:5:8449281:6
GUID	0
Full Reference	Smith, M. J. (1962) DETERMINATION OF THE NONSTOICHIOMETRIC DOPING MECHANISM IN Bi2Se3. Applied Physics Letters, 1 (4). 79-81 doi:10.1063/1.1753705
Plain Text	Smith, M. J. (1962) DETERMINATION OF THE NONSTOICHIOMETRIC DOPING MECHANISM IN Bi2Se3. Applied Physics Letters, 1 (4). 79-81 doi:10.1063/1.1753705
In	(1962, December) Applied Physics Letters Vol. 1 (4) AIP Publishing

	*DiDomenico, M., Pantell, R. H., Svelto, O., Weaver, J. N. (1962) OPTICAL FREQUENCY MIXING IN BULK SEMICONDUCTORS. Applied Physics Letters, 1 (4). 77-79 doi:10.1063/1.1753704*
	*Mihaila, M., Varasteanu, P. (2025) Surface phonons in the 1/f noise of Bi2Se3. Applied Physics Letters, 126 (3). doi:10.1063/5.0252847*
	Gebauer, J., Zhao, R., Specht, P., Weber, E. R., Börner, F., Redmann, F., Krause-Rehberg, R. (2001) Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?. Applied Physics Letters, 79 (26). 4313-4315 doi:10.1063/1.1427150
	Zhou, Z. H., Wang, J., Xue, J. M., Chan, H. S. O. (2001) Cluster glass structure in nanohybrids of nonstoichiometric zinc ferrite in silica matrix. Applied Physics Letters, 79 (19). 3167-3169 doi:10.1063/1.1415375
	Hansen, W., Smith, T. P., Piao, J., Beresford, R., Wang, W. I. (1990) Magnetoresistance measurements of doping symmetry and strain effects in GaSb‐AlSb quantum wells. Applied Physics Letters, 56 (1). 81-83 doi:10.1063/1.102659
	*Becker, J. H., Frederikse, H. P. R. (1962) Electrical Properties of Nonstoichiometric Semiconductors. Journal of Applied Physics, 33 (1). 447-453 doi:10.1063/1.1777139*
	Parbrook, P. J., Tanner, B. K., Lunn, B., Hogg, J. H. C., Keir, A. M., Johnson, A. D. (2002) Effect of Si doping on the relaxation mechanism of InGaAs on GaAs. Applied Physics Letters, 81 (15). 2773-2775 doi:10.1063/1.1513181
	Wang, Zhiyong, Lin, Tao, Wei, Peng, Liu, Xinfei, Dumas, Randy, Liu, Kai, Shi, Jing (2010) Tuning carrier type and density in Bi2Se3 by Ca-doping. Applied Physics Letters, 97 (4). 42112pp. doi:10.1063/1.3473778
	Stirman, J. N., Takeguchi, M., McCartney, M. R., Smith, David J. (2004) Determination of In concentration in pseudomorphic InxGa1−xN quantum wells based on convergent-beam electron diffraction. Applied Physics Letters, 84 (4). 490-492 doi:10.1063/1.1641173
	*Liu, H. C., Gao, M., McCaffrey, J., Wasilewski, Z. R., Fafard, S. (2001) Quantum dot infrared photodetectors. Applied Physics Letters, 78 (1). 79-81 doi:10.1063/1.1337649*
	Siliquini, J. F., Dell, J. M., Musca, C. A., Smith, E. P. G., Faraone, L., Piotrowski, J. (1998) Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy. Applied Physics Letters, 72 (1). 52-54 doi:10.1063/1.120642

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Smith, M. J. (1962) DETERMINATION OF THE NONSTOICHIOMETRIC DOPING MECHANISM IN Bi2Se3. Applied Physics Letters, 1 (4). 79-81 doi:10.1063/1.1753705

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