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Janusz, T., Fies, W. (1963) OBSERVATIONS ON FIELD EMISSION SURFACE NOISE. Applied Physics Letters, 3 (8). 131-132 doi:10.1063/1.1753900

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Reference TypeJournal (article/letter/editorial)
TitleOBSERVATIONS ON FIELD EMISSION SURFACE NOISE
JournalApplied Physics Letters
AuthorsJanusz, T.Author
Fies, W.Author
Year1963 (October 15)Volume3
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1753900Search in ResearchGate
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Mindat Ref. ID8449712Long-form Identifiermindat:1:5:8449712:1
GUID0
Full ReferenceJanusz, T., Fies, W. (1963) OBSERVATIONS ON FIELD EMISSION SURFACE NOISE. Applied Physics Letters, 3 (8). 131-132 doi:10.1063/1.1753900
Plain TextJanusz, T., Fies, W. (1963) OBSERVATIONS ON FIELD EMISSION SURFACE NOISE. Applied Physics Letters, 3 (8). 131-132 doi:10.1063/1.1753900
In(1963, October) Applied Physics Letters Vol. 3 (8) AIP Publishing

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Pessa, M., Mäkelä, R., Suntola, T. (1981) Characterization of surface exchange reactions used to grow compound films. Applied Physics Letters, 38 (3). 131-132 doi:10.1063/1.92274
Kaiser, W., Lessing, H. (1963) EFFECTS OF AN ELECTRIC FIELD ON THE LASER EMISSION OF RUBY. Applied Physics Letters, 2 (11). 206-208 doi:10.1063/1.1753736
Klein, Ralph, Leder, Lewis B. (1963) Field‐Emission Observations of Carbon on Tantalum. The Journal of Chemical Physics, 38 (8) 1863-1866 doi:10.1063/1.1733887
Smith, R. G., Skinner, J. G., Geusic, J. E., Nilsen, W. G. (1968) OBSERVATIONS OF NONCOLLINEAR PHASE MATCHING IN OPTICAL PARAMETRIC NOISE EMISSION. Applied Physics Letters, 12 (3). 97-100 doi:10.1063/1.1651914
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Dousmanis, G. C., Mueller, C. W., Nelson, H. (1963) EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODES. Applied Physics Letters, 3 (8). 133-135 doi:10.1063/1.1753901
Geis, M. W., Deneault, S., Krohn, K. E., Marchant, M., Lyszczarz, T. M., Cooke, D. L. (2005) Field emission at 10Vcm−1 with surface emission cathodes on negative-electron-affinity insulators. Applied Physics Letters, 87 (19). 192115pp. doi:10.1063/1.2130382
Wilson, D. K. (1963) STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GaAsp‐nJUNCTIONS. Applied Physics Letters, 3 (8). 127-129 doi:10.1063/1.1753898
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