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Hart, R. R., Lee, D. H., Marsh, O. J. (1972) Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al. Applied Physics Letters, 20 (2). 76-77 doi:10.1063/1.1654053

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al
JournalApplied Physics Letters
AuthorsHart, R. R.Author
Lee, D. H.Author
Marsh, O. J.Author
Year1972 (January 15)Volume20
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1654053Search in ResearchGate
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Mindat Ref. ID8456168Long-form Identifiermindat:1:5:8456168:4
GUID0
Full ReferenceHart, R. R., Lee, D. H., Marsh, O. J. (1972) Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al. Applied Physics Letters, 20 (2). 76-77 doi:10.1063/1.1654053
Plain TextHart, R. R., Lee, D. H., Marsh, O. J. (1972) Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al. Applied Physics Letters, 20 (2). 76-77 doi:10.1063/1.1654053
In(1972, January) Applied Physics Letters Vol. 20 (2) AIP Publishing

See Also

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Lee, D. H., Hart, R. R., Marsh, O. J. (1972) Effects of Al Films on Ion‐Implanted Si. Applied Physics Letters, 20 (2). 73-75 doi:10.1063/1.1654052
Hart, R. R., Dunlap, H. L., Marsh, O. J. (1975) Ion‐induced migration of Cu into Si. Journal of Applied Physics, 46 (5). 1947-1951 doi:10.1063/1.321871
Picraux, S. T., Westmoreland, J. E., Mayer, J. W., Hart, R. R., Marsh, O. J. (1969) TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS. Applied Physics Letters, 14 (1). 7-9 doi:10.1063/1.1652655
Hart, R. R., Marsh, O. J. (1969) LATTICE DISORDER PRODUCED IN Si BY 40‐keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR. Applied Physics Letters, 15 (7). 206-208 doi:10.1063/1.1652969
Dietrich, H. B., Weisenberger, W. H., Comas, J. (1976) Anomalous migration of ion‐implanted Al in Si. Applied Physics Letters, 28 (4). 182-184 doi:10.1063/1.88716
Akutagawa, W., Dunlap, H.L., Hart, R., Marsh, O. J. (1979) Impurity‐peak formation during proton‐enhanced diffusion of phosphorus and boron in silicon. Journal of Applied Physics, 50 (2). 777-782 doi:10.1063/1.326044
Eriksson, L., Davies, J. A., Denhartog, J., Mayer, J. W., Marsh, O. J., Markarious, R. (1967) ANALYSIS OF Sb‐IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS. Applied Physics Letters, 10 (11). 323-325 doi:10.1063/1.1754830
Eriksson, L., Davies, J. A., Denhartog, J., Mayer, J. W., Marsh, O. J., Mankarious, R. (1967) Erratum: Analysis of Sb‐Implanted Silicon by (p, p) Scattering and Hall Measurements. Applied Physics Letters, 11 (3). 110 doi:10.1063/1.1755040
Bauer, L. ‐O. (1972) Enhanced Annealing Effects in Boron‐Implanted Layers in Silicon by Postimplantation of Silicon Ions. Applied Physics Letters, 20 (3). 107-109 doi:10.1063/1.1654067
McCaldin, J. O., Sankur, H. (1972) Precipitation of Si from the Al Metallization of Integrated Circuits. Applied Physics Letters, 20 (4). 171-172 doi:10.1063/1.1654096
Bower, R. W., Baron, R., Mayer, J. W., Marsh, O. J. (1966) DEEP (1–10 μ) PENETRATION OF ION‐IMPLANTED DONORS IN SILICON. Applied Physics Letters, 9 (5). 203-205 doi:10.1063/1.1754710
 
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