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Schwettmann, F.N., Kendall, D.L. (1972) On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon. Applied Physics Letters, 21 (1). 2-4 doi:10.1063/1.1654200

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Reference TypeJournal (article/letter/editorial)
TitleOn the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon
JournalApplied Physics Letters
AuthorsSchwettmann, F.N.Author
Kendall, D.L.Author
Year1972 (July)Volume21
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1654200Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8456481Long-form Identifiermindat:1:5:8456481:2
GUID0
Full ReferenceSchwettmann, F.N., Kendall, D.L. (1972) On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon. Applied Physics Letters, 21 (1). 2-4 doi:10.1063/1.1654200
Plain TextSchwettmann, F.N., Kendall, D.L. (1972) On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon. Applied Physics Letters, 21 (1). 2-4 doi:10.1063/1.1654200
In(1972, July) Applied Physics Letters Vol. 21 (1) AIP Publishing

See Also

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Schwettmann, F. N., Kendall, D. L. (1971) Carrier Profile Change for Phosphorus‐Diffused Layers on Low‐Temperature Heat Treatment. Applied Physics Letters, 19 (7). 218-220 doi:10.1063/1.1653892
Schwettmann, F.N. (1973) Enhanced diffusion during the implantation of arsenic in silicon. Applied Physics Letters, 22 (11). 570-572 doi:10.1063/1.1654512
Graul, J., Wagner, E. (1972) Growth mechanism of polycrystalline β‐SiC layers on silicon substrate. Applied Physics Letters, 21 (2). 67-69 doi:10.1063/1.1654282
Chou, S., Davidson, L. A., Gibbons, J. F. (1970) A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION‐SCATTERING TECHNIQUE. Applied Physics Letters, 17 (1). 23-26 doi:10.1063/1.1653237
Yau, L.D., Sah, C.T. (1972) Measurement of trapped‐minority‐carrier thermal emission rates from Au, Ag, and Co traps in silicon. Applied Physics Letters, 21 (4). 157-158 doi:10.1063/1.1654324
Fair, Richard B. (1978) Analysis of Phosphorus-Diffused Layers in Silicon. Journal of the Electrochemical Society, 125. 323pp. doi:10.1149/1.2131438
Fair, Richard B. (1976) Profile Parameters of Implanted-Diffused Arsenic Layers in Silicon. Journal of the Electrochemical Society, 123. 583pp. doi:10.1149/1.2132883
Schmid, W., Reiner, J. (1982) Minority‐carrier lifetime in gold‐diffused silicon at high carrier concentrations. Journal of Applied Physics, 53 (9). 6250-6252 doi:10.1063/1.331542
Kendall, Don L. (1975) On etching very narrow grooves in silicon. Applied Physics Letters, 26 (4). 195-198 doi:10.1063/1.88113
Strunk, H., Gösele, U., Kolbesen, B. O. (1979) Interstitial supersaturation near phosphorus‐diffused emitter zones in silicon. Applied Physics Letters, 34 (8). 530-532 doi:10.1063/1.90853
Hulin, R., Goedbloed, J.J. (1972) Influence of carrier diffusion on the intrinsic response time of semiconductor avalanches. Applied Physics Letters, 21 (2). 69-71 doi:10.1063/1.1654283
 
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