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Jellison, G. E., Lowndes, D. H. (1982) Optical absorption coefficient of silicon at 1.152 μ at elevated temperatures. Applied Physics Letters, 41 (7). 594-596 doi:10.1063/1.93621

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Reference TypeJournal (article/letter/editorial)
TitleOptical absorption coefficient of silicon at 1.152 μ at elevated temperatures
JournalApplied Physics Letters
AuthorsJellison, G. E.Author
Lowndes, D. H.Author
Year1982 (October)Volume41
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.93621Search in ResearchGate
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Mindat Ref. ID8471132Long-form Identifiermindat:1:5:8471132:2
GUID0
Full ReferenceJellison, G. E., Lowndes, D. H. (1982) Optical absorption coefficient of silicon at 1.152 μ at elevated temperatures. Applied Physics Letters, 41 (7). 594-596 doi:10.1063/1.93621
Plain TextJellison, G. E., Lowndes, D. H. (1982) Optical absorption coefficient of silicon at 1.152 μ at elevated temperatures. Applied Physics Letters, 41 (7). 594-596 doi:10.1063/1.93621
In(1982, October) Applied Physics Letters Vol. 41 (7) AIP Publishing

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Jellison, G. E., Modine, F. A. (1982) Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures. Applied Physics Letters, 41 (2). 180-182 doi:10.1063/1.93454
Jellison, G. E., Modine, F. A. (1994) Optical functions of silicon at elevated temperatures. Journal of Applied Physics, 76 (6). 3758-3761 doi:10.1063/1.357378
Jellison, G. E., Lowndes, D. H. (1985) Time‐resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiation. Applied Physics Letters, 47 (7). 718-721 doi:10.1063/1.96014
Jellison, G. E., Burke, H. H. (1986) The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths. Journal of Applied Physics, 60 (2). 841-843 doi:10.1063/1.337386
Wood, R. F., Lowndes, D. H., Jellison, G. E., Modine, F. A. (1982) Melting model and Raman scattering during pulsed laser annealing of ion‐implanted silicon. Applied Physics Letters, 41 (3). 287-290 doi:10.1063/1.93467
Jellison, G. E., Lowndes, D. H. (1987) Measurements of the optical properties of liquid silicon and germanium using nanosecond time‐resolved ellipsometry. Applied Physics Letters, 51 (5). 352-354 doi:10.1063/1.98438
Rogne, H., Timans, P. J., Ahmed, H. (1996) Infrared absorption in silicon at elevated temperatures. Applied Physics Letters, 69 (15). 2190-2192 doi:10.1063/1.117161
Lowndes, D. H., Cleland, J. W., Christie, W. H., Eby, R. E., Jellison, G. E., Narayan, J., Westbrook, R. D., Wood, R. F., Nilson, J. A., Dass, S. C. (1982) Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication. Applied Physics Letters, 41 (10). 938-940 doi:10.1063/1.93342
Jellison, G. E., Modine, F. A. (1983) Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures. Physical Review B, 27 (12) 7466-7472 doi:10.1103/physrevb.27.7466
Robin, James E., Nordin, Paul (1975) Spectral absorptance at 3.8‐μ wavelength for aluminum and pyroceram at elevated temperatures. Applied Physics Letters, 27 (9). 493-495 doi:10.1063/1.88546
Jellison, G. E., Modine, F. A. (1982) Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry. Journal of Applied Physics, 53 (5). 3745-3753 doi:10.1063/1.331113
 
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