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Scifres, D. R., Streifer, W., Burnham, R. D., Paoli, T. L., Lindström, C. (1983) Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays. Applied Physics Letters, 42 (6). 495-497 doi:10.1063/1.93980

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Reference TypeJournal (article/letter/editorial)
TitleNear‐field and far‐field patterns of phase‐locked semiconductor laser arrays
JournalApplied Physics Letters
AuthorsScifres, D. R.Author
Streifer, W.Author
Burnham, R. D.Author
Paoli, T. L.Author
Lindström, C.Author
Year1983 (March 15)Volume42
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.93980Search in ResearchGate
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Mindat Ref. ID8471874Long-form Identifiermindat:1:5:8471874:1
GUID0
Full ReferenceScifres, D. R., Streifer, W., Burnham, R. D., Paoli, T. L., Lindström, C. (1983) Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays. Applied Physics Letters, 42 (6). 495-497 doi:10.1063/1.93980
Plain TextScifres, D. R., Streifer, W., Burnham, R. D., Paoli, T. L., Lindström, C. (1983) Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays. Applied Physics Letters, 42 (6). 495-497 doi:10.1063/1.93980
In(1983, March) Applied Physics Letters Vol. 42 (6) AIP Publishing

See Also

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Scifres, D. R., Burnham, R. D., Lindström, C., Streifer, W., Paoli, T. L. (1983) Phase‐locked (GaAl)As laser emitting 1.5 W cw per mirror. Applied Physics Letters, 42 (8). 645-647 doi:10.1063/1.94060
Scifres, D. R., Burnham, R. D., Streifer, W. (1978) Phase‐locked semiconductor laser array. Applied Physics Letters, 33 (12). 1015-1017 doi:10.1063/1.90253
Scifres, D. R., Burnham, R. D., Streifer, W. (1982) Continuous wave high‐power, high‐temperature semiconductor laser phase‐locked arrays. Applied Physics Letters, 41 (11). 1030-1032 doi:10.1063/1.93382
Lindström, C., Paoli, T. L., Burnham, R. D., Scifres, D. R., Streifer, W. (1983) Long‐lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 43 (3). 278-280 doi:10.1063/1.94301
Burnham, R. D., Lindström, C., Paoli, T. L., Scifres, D. R., Streifer, W., Holonyak, N. (1983) cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW. Applied Physics Letters, 42 (11). 937-939 doi:10.1063/1.93806
Welch, D. F., Cross, P. S., Scifres, D. R., Streifer, W., Burnham, R. D. (1986) High‐power (cw) in‐phase locked ‘‘Y’’ coupled laser arrays. Applied Physics Letters, 49 (24). 1632-1634 doi:10.1063/1.97249
Scifres, D. R., Streifer, W., Burnham, R. D. (1979) High‐power coupled‐multiple‐stripe phase‐locked injection laser. Applied Physics Letters, 34 (4). 259-261 doi:10.1063/1.90773
Camras, M. D., Holonyak, N., Burnham, R. D., Streifer, W., Scifres, D. R., Paoli, T. L., Lindström, C. (1983) Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion. Journal of Applied Physics, 54 (10). 5637-5641 doi:10.1063/1.331825
Camras, M. D., Holonyak, N., Nixon, M. A., Burnham, R. D., Streifer, W., Scifres, D. R., Paoli, T. L., Lindström, C. (1983) Photopumped low threshold Alx″Ga1−x″As ‐Alx′Ga1−x′As‐AlxGa1−xAs (x″∼0.85,x′∼0.3,x=0) single quantum well lasers. Applied Physics Letters, 42 (9). 761-763 doi:10.1063/1.94091
Streifer, W., Scifres, D. R., Burnham, R. D. (1983) Diode laser threshold current density and lasing wavelength as functions of active region thickness. Applied Physics Letters, 42 (5). 401-403 doi:10.1063/1.93954
Burnham, R. D., Scifres, D. R., Streifer, W., Peled, S. (1979) Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser. Applied Physics Letters, 35 (10). 734-736 doi:10.1063/1.90967
 
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