Binns, M. J., Brown, W. P., Wilkes, J. G., Newman, R. C., Livingston, F. M., Messoloras, S., Stewart, R. J. (1983) Diffusion limited precipitation of oxygen in dislocation‐free silicon. Applied Physics Letters, 42 (6). 525-527 doi:10.1063/1.93992

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Reference Type	Journal (article/letter/editorial)
Title	Diffusion limited precipitation of oxygen in dislocation‐free silicon
Journal	Applied Physics Letters
Authors	Binns, M. J.		Author
	Brown, W. P.		Author
	Wilkes, J. G.		Author
	Newman, R. C.		Author
	Livingston, F. M.		Author
	Messoloras, S.		Author
	Stewart, R. J.		Author
Year	1983 (March 15)	Volume	42
Issue	6
Publisher	AIP Publishing
DOI	doi:10.1063/1.93992Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8471898	Long-form Identifier	mindat:1:5:8471898:1
GUID	0
Full Reference	Binns, M. J., Brown, W. P., Wilkes, J. G., Newman, R. C., Livingston, F. M., Messoloras, S., Stewart, R. J. (1983) Diffusion limited precipitation of oxygen in dislocation‐free silicon. Applied Physics Letters, 42 (6). 525-527 doi:10.1063/1.93992
Plain Text	Binns, M. J., Brown, W. P., Wilkes, J. G., Newman, R. C., Livingston, F. M., Messoloras, S., Stewart, R. J. (1983) Diffusion limited precipitation of oxygen in dislocation‐free silicon. Applied Physics Letters, 42 (6). 525-527 doi:10.1063/1.93992
In	(1983, March) Applied Physics Letters Vol. 42 (6) AIP Publishing

	Livingston, F M, Messoloras, S, Newman, R C, Pike, B C, Stewart, R J, Binns, M J, Brown, W P, Wilkes, J G (1984) An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon. Journal of Physics C: Solid State Physics, 17 (34). 6253-6276 doi:10.1088/0022-3719/17/34/025
	Newman, R.C., Binns, M.J., Brown, W.P., Livingston, F.M., Messoloras, S., Stewart, R.J., Wilkes, J.G. (1983) Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle size. Physica B+C, 116 (1). 264-270 doi:10.1016/0378-4363(83)90257-7
	Bergholz, W., Binns, M. J., Booker, G. R., Hutchison, J. C., Kinder, S. H., Messoloras, S., Newman, R. C., Stewart, R. J., Wilkes, J. G. (1989) A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption. Philosophical Magazine B, 59 (5). 499-522 doi:10.1080/13642818908211173
	Oates, A. S., Newman, R. C., Woolley, R., Davies, G., Lightowlers, E. C., Binns, M. J., Wilkes, J. G. (1985) Determination of low levels of carbon in Czochralski silicon. Applied Physics Letters, 47 (7). 705-707 doi:10.1063/1.96065
	McQuaid, S. A., Binns, M. J., Londos, C. A., Tucker, J. H., Brown, A. R., Newman, R. C. (1995) Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms. Journal of Applied Physics, 77 (4). 1427-1442 doi:10.1063/1.358890
	Oates, A S, Binns, M J, Newman, R C, Tucker, R C, Wilkes, J G, Wilkinson, A (1984) The mechanism of radiation-enhanced diffusion of oxygen in silicon at room temperature. Journal of Physics C: Solid State Physics, 17 (32). 5695-5705 doi:10.1088/0022-3719/17/32/006
	Gupta, S., Messoloras, S., Schneider, J. R., Stewart, R. J., Zulehner, W. (1991) Oxygen precipitation in heavily boron-doped silicon. Journal of Applied Crystallography, 24 (5). 576-580 doi:10.1107/s0021889890013164
	Davies, G, Oates, A S, Newman, R C, Woolley, R, Lightowlers, E C, Binns, M J, Wilkes, J G (1986) Carbon-related radiation damage centres in Czochralski silicon. Journal of Physics C: Solid State Physics, 19 (6). 841-855 doi:10.1088/0022-3719/19/6/006
	Londos, C. A., Binns, M. J., Brown, A. R., McQuaid, S. A., Newman, R. C. (1993) Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C. Applied Physics Letters, 62 (13). 1525-1526 doi:10.1063/1.108628
	Newman, R C, Tucker, J H, Livingston, F M (1983) Radiation-enhanced diffusion of oxygen in silicon at room temperature. Journal of Physics C: Solid State Physics, 16 (5). doi:10.1088/0022-3719/16/5/004
	*McQuaid, S. A., Binns, M. J., Newman, R. C., Lightowlers, E. C., Clegg, J. B. (1993) Solubility of hydrogen in silicon at 1300 °C. Applied Physics Letters, 62 (14). 1612-1614 doi:10.1063/1.108602*

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Binns, M. J., Brown, W. P., Wilkes, J. G., Newman, R. C., Livingston, F. M., Messoloras, S., Stewart, R. J. (1983) Diffusion limited precipitation of oxygen in dislocation‐free silicon. Applied Physics Letters, 42 (6). 525-527 doi:10.1063/1.93992

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