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Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Chang, S. T., Poindexter, E. H., Caplan, P. J. (1983) Characteristic electronic defects at the Si‐SiO2interface. Applied Physics Letters, 43 (6). 563-565 doi:10.1063/1.94420

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristic electronic defects at the Si‐SiO2interface
JournalApplied Physics Letters
AuthorsJohnson, N. M.Author
Biegelsen, D. K.Author
Moyer, M. D.Author
Chang, S. T.Author
Poindexter, E. H.Author
Caplan, P. J.Author
Year1983 (September 15)Volume43
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.94420Search in ResearchGate
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Mindat Ref. ID8472775Long-form Identifiermindat:1:5:8472775:8
GUID0
Full ReferenceJohnson, N. M., Biegelsen, D. K., Moyer, M. D., Chang, S. T., Poindexter, E. H., Caplan, P. J. (1983) Characteristic electronic defects at the Si‐SiO2interface. Applied Physics Letters, 43 (6). 563-565 doi:10.1063/1.94420
Plain TextJohnson, N. M., Biegelsen, D. K., Moyer, M. D., Chang, S. T., Poindexter, E. H., Caplan, P. J. (1983) Characteristic electronic defects at the Si‐SiO2interface. Applied Physics Letters, 43 (6). 563-565 doi:10.1063/1.94420
In(1983, September) Applied Physics Letters Vol. 43 (6) AIP Publishing

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Poindexter, E. H., Gerardi, G. J., Rueckel, M.‐E., Caplan, P. J., Johnson, N. M., Biegelsen, D. K. (1984) Electronic traps andPbcenters at the Si/SiO2interface: Band‐gap energy distribution. Journal of Applied Physics, 56 (10). 2844-2849 doi:10.1063/1.333819
Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Deline, V. R., Evans, C. A. (1981) Deuterium at the Si‐SiO2 interface detected by secondary‐ion mass spectrometry. Applied Physics Letters, 38 (12). 995-997 doi:10.1063/1.92225
Biegelsen, D. K., Johnson, N. M., Bartelink, D. J., Moyer, M. D. (1981) Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures. Applied Physics Letters, 38 (3). 150-152 doi:10.1063/1.92282
Chang, S. T., Wu, J. K., Lyon, S. A. (1986) Amphoteric defects at the Si‐SiO2interface. Applied Physics Letters, 48 (10). 662-664 doi:10.1063/1.96736
Johnson, N. M., Biegelsen, D. K., Moyer, M. D. (1982) Deuterium passivation of grain‐boundary dangling bonds in silicon thin films. Applied Physics Letters, 40 (10). 882-884 doi:10.1063/1.92934
Johnson, N. M., Biegelsen, D. K., Moyer, M. D. (1981) Grain boundaries inp‐njunction diodes fabricated in laser‐recrystallized silicon thin films. Applied Physics Letters, 38 (11). 900-902 doi:10.1063/1.92221
Caplan, Philip J., Poindexter, Edward H., Morrison, S. Roy (1982) Ultraviolet bleaching and regeneration of ⋅Si≡Si3centers at the Si/SiO2interface of thinly oxidized silicon wafers. Journal of Applied Physics, 53 (1). 541-545 doi:10.1063/1.329915
Caplan, Philip J., Poindexter, Edward H. (1981) Optical enhancement of the electron paramagnetic resonance signal from SiIIIcenters at the Si/SiO2interface. Journal of Applied Physics, 52 (1). 522-524 doi:10.1063/1.328449
Johnson, N. M., Moyer, M. D., Fennell, L. E. (1982) Deep levels in cw laser‐crystallized silicon thin films. Applied Physics Letters, 41 (6). 560-563 doi:10.1063/1.93595
Jackson, Warren B., Johnson, N. M., Biegelsen, D. K. (1983) Density of gap states of silicon grain boundaries determined by optical absorption. Applied Physics Letters, 43 (2). 195-197 doi:10.1063/1.94278
Zvanut, M. E., Feigl, F. J., Fowler, W. B., Rudra, J. K., Caplan, P. J., Poindexter, E. H., Zook, J. D. (1989) RechargeableE’ centers in sputter‐deposited silicon dioxide films. Applied Physics Letters, 54 (21). 2118-2120 doi:10.1063/1.101512
 
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