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Goodnick, S. M., Hwang, T., Wilmsen, C. W. (1984) New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 44 (4). 453-455 doi:10.1063/1.94764

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Reference TypeJournal (article/letter/editorial)
TitleNew model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors
JournalApplied Physics Letters
AuthorsGoodnick, S. M.Author
Hwang, T.Author
Wilmsen, C. W.Author
Year1984 (February 15)Volume44
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.94764Search in ResearchGate
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Mindat Ref. ID8473487Long-form Identifiermindat:1:5:8473487:3
GUID0
Full ReferenceGoodnick, S. M., Hwang, T., Wilmsen, C. W. (1984) New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 44 (4). 453-455 doi:10.1063/1.94764
Plain TextGoodnick, S. M., Hwang, T., Wilmsen, C. W. (1984) New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 44 (4). 453-455 doi:10.1063/1.94764
In(1984, February) Applied Physics Letters Vol. 44 (4) AIP Publishing

See Also

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Laughlin, D. H., Wilmsen, C. W. (1980) An improved anodic oxide insulator for InP metal‐insulated‐semiconductor field‐effect transistors. Applied Physics Letters, 37 (10). 915-916 doi:10.1063/1.91857
Taillepied, M., Gourrier, S. (1986) Current drift mechanism in In0.53Ga0.47As depletion mode metal‐insulator field‐effect transistors. Applied Physics Letters, 48 (15). 978-980 doi:10.1063/1.96629
Pande, K. P., Gutierrez, D. (1985) Channel mobility enhancement in InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 46 (4). 416-418 doi:10.1063/1.95597
Antreasyan, A., Tsang, W. T., Garbinski, P. A. (1986) Enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors grown by chemical beam epitaxy. Applied Physics Letters, 49 (14). 874-876 doi:10.1063/1.97521
Iwase, Y., Arai, F., Sugano, T. (1988) Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 53 (7). 565-567 doi:10.1063/1.99858
Iwase, Y., Arai, F., Sugano, T. (1988) Effects of deposition temperature of insulator films on the electrical characteristics of InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 52 (17). 1437-1438 doi:10.1063/1.99138
Johnson, J. G., Forrest, S. R., Zeisse, C. R., Nguyen, R. (1988) Threshold voltage drift of InPn‐channel enhancement mode metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters, 52 (6). 495-497 doi:10.1063/1.99423
Hirota, Y., Okamura, M., Hisaki, T., Yamaguchi, E. (1987) Temperature dependence of electron mobility for inversion‐mode InP metal‐insulator‐semiconductor field‐effect transistors. Journal of Applied Physics, 61 (1). 277-283 doi:10.1063/1.338817
Smith, T. P., Phillips, Julia M., Augustyniak, W. M., Stiles, P. J. (1984) Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si. Applied Physics Letters, 45 (8). 907-909 doi:10.1063/1.95410
Huang, M. Q., Lai, P. T., Ma, Z. J., Wong, H., Cheng, Y. C. (1992) Improvement of punchthrough‐induced gate‐oxide breakdown inn‐channel metal‐oxide‐semiconductor field‐effect transistors using rapid thermal nitridation. Applied Physics Letters, 61 (4). 453-455 doi:10.1063/1.107882
Sano, Nobuyuki, Tomizawa, Masaaki (2001) Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors. Applied Physics Letters, 79 (14). 2267-2269 doi:10.1063/1.1406980
 
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