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Wu, N. R., Sadana, D. K., Washburn, J. (1984) Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon. Applied Physics Letters, 44 (8). 782-784 doi:10.1063/1.94917

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Reference TypeJournal (article/letter/editorial)
TitleDirect evidence of arsenic clustering in high dose arsenic‐implanted silicon
JournalApplied Physics Letters
AuthorsWu, N. R.Author
Sadana, D. K.Author
Washburn, J.Author
Year1984 (April 15)Volume44
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.94917Search in ResearchGate
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Mindat Ref. ID8473802Long-form Identifiermindat:1:5:8473802:8
GUID0
Full ReferenceWu, N. R., Sadana, D. K., Washburn, J. (1984) Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon. Applied Physics Letters, 44 (8). 782-784 doi:10.1063/1.94917
Plain TextWu, N. R., Sadana, D. K., Washburn, J. (1984) Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon. Applied Physics Letters, 44 (8). 782-784 doi:10.1063/1.94917
In(1984, April) Applied Physics Letters Vol. 44 (8) AIP Publishing

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Sands, T., Sadana, D. K., Gronsky, R., Washburn, J. (1984) High resolution structural characterization of the amorphous‐crystalline interface in Se+‐implanted GaAs. Applied Physics Letters, 44 (9). 874-876 doi:10.1063/1.94963
Sadana, D. K., Sands, T., Washburn, J. (1984) High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization. Applied Physics Letters, 44 (6). 623-625 doi:10.1063/1.94856
Kamgar, Avid, Baiocchi, F. A., Sheng, T. T. (1986) Kinetics of arsenic activation and clustering in high dose implanted silicon. Applied Physics Letters, 48 (16). 1090-1092 doi:10.1063/1.96607
Kumar, S. N., Chaussemy, G., Canut, B., Laugier, A. (1988) Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon. Applied Physics Letters, 53 (22). 2167-2169 doi:10.1063/1.100414
Sands, T., Washburn, J., Gronsky, R., Maszara, W., Sadana, D. K., Rozgonyi, G. A. (1984) Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon. Applied Physics Letters, 45 (9). 982-984 doi:10.1063/1.95446
Byrne, P. F., Cheung, N. W., Sadana, D. K. (1982) Damage induced through megavolt arsenic implantation into silicon. Applied Physics Letters, 41 (6). 537-539 doi:10.1063/1.93581
Sadana, D. K., Choksi, H., Washburn, J., Byrne, P. F., Cheung, N. W. (1984) Recrystallization of amorphous gallium arsenide by ion beams. Applied Physics Letters, 44 (3). 301-303 doi:10.1063/1.94732
Venkatesan, T. N. C., Golovchenko, J. A., Poate, J. M., Cowan, P., Celler, G. K. (1978) Dose dependence in the laser annealing of arsenic‐implanted silicon. Applied Physics Letters, 33 (5). 429-431 doi:10.1063/1.90411
Sadana, D. K., Acovic, A., Davari, B., Grutzmacher, D., Hanafi, H., Cardone, F. (1992) Boron redistribution in arsenic‐implanted silicon and short‐channel effects in metal–oxide–semiconductor field effect transistors. Applied Physics Letters, 61 (25). 3038-3040 doi:10.1063/1.108002
Kalish, R., Sedgwick, T. O., Mader, S., Shatas, S. (1984) Transient enhanced diffusion in arsenic‐implanted short time annealed silicon. Applied Physics Letters, 44 (1). 107-109 doi:10.1063/1.94572
Sadana, D. K., Washburn, J., Magee, C. W. (1983) Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface. Journal of Applied Physics, 54 (6). 3479-3484 doi:10.1063/1.332412
 
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