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Hyun, C., Shur, M. S., Hack, M., Yaniv, Z., Cannella, V. (1984) Above threshold characteristics of amorphous silicon alloy thin‐film transistors. Applied Physics Letters, 45 (11). 1202-1203 doi:10.1063/1.95097

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Reference TypeJournal (article/letter/editorial)
TitleAbove threshold characteristics of amorphous silicon alloy thin‐film transistors
JournalApplied Physics Letters
AuthorsHyun, C.Author
Shur, M. S.Author
Hack, M.Author
Yaniv, Z.Author
Cannella, V.Author
Year1984 (December)Volume45
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.95097Search in ResearchGate
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Mindat Ref. ID8474170Long-form Identifiermindat:1:5:8474170:3
GUID0
Full ReferenceHyun, C., Shur, M. S., Hack, M., Yaniv, Z., Cannella, V. (1984) Above threshold characteristics of amorphous silicon alloy thin‐film transistors. Applied Physics Letters, 45 (11). 1202-1203 doi:10.1063/1.95097
Plain TextHyun, C., Shur, M. S., Hack, M., Yaniv, Z., Cannella, V. (1984) Above threshold characteristics of amorphous silicon alloy thin‐film transistors. Applied Physics Letters, 45 (11). 1202-1203 doi:10.1063/1.95097
In(1984, December) Applied Physics Letters Vol. 45 (11) AIP Publishing

See Also

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Shur, M. S., Hack, M., Hyun, C. (1984) Flat‐band voltage and surface states in amorphous silicon‐based alloy field‐effect transistors. Journal of Applied Physics, 56 (2). 382-386 doi:10.1063/1.333976
Shur, Michael, Hyun, Choong, Hack, Michael, Yaniv, Zvi, Yang, Mohshi, Cannella, Vin (1985) Localized states distribution and the characteristics of amorphous silicon alloy field defect transistors. Journal of Non-Crystalline Solids, 77. 1401-1404 doi:10.1016/0022-3093(85)90917-2
Shur, M., Hack, M. (1984) Physics of amorphous silicon based alloy field‐effect transistors. Journal of Applied Physics, 55 (10). 3831-3842 doi:10.1063/1.332893
Slade, H. C., Shur, M. S., Deane, S. C., Hack, M. (1996) Below threshold conduction in a‐Si:H thin film transistors with and without a silicon nitride passivating layer. Applied Physics Letters, 69 (17). 2560-2562 doi:10.1063/1.117739
Powell, M. J., Orton, J. W. (1984) Characteristics of amorphous silicon staggered‐electrode thin‐film transistors. Applied Physics Letters, 45 (2). 171-173 doi:10.1063/1.95158
Shur, Michael, Hack, Michael, Shaw, John G., Martin, R. A. (1989) Capacitance‐voltage characteristics of amorphous silicon thin‐film transistors. Journal of Applied Physics, 66 (7). 3381-3385 doi:10.1063/1.344134
Hack, M., Guha, S., Shur, M. (1984) Dependence of photoconductivity on the dark Fermi level position in amorphous silicon alloys. Applied Physics Letters, 45 (4). 467-469 doi:10.1063/1.95218
Shur, Michael, Hyun, Choong, Hack, Michael (1986) New high field‐effect mobility regimes of amorphous silicon alloy thin‐film transistor operation. Journal of Applied Physics, 59 (7). 2488-2497 doi:10.1063/1.336994
Shur, Michael, Hack, Michael, Shaw, John G. (1989) A new analytic model for amorphous silicon thin‐film transistors. Journal of Applied Physics, 66 (7). 3371-3380 doi:10.1063/1.344481
Hack, M., Shur, M., Tsai, C. C. (1989) Amorphous silicon photoconductive diode. Applied Physics Letters, 54 (2). 96-98 doi:10.1063/1.101200
Hack, M., Shur, M. (1987) Analysis of amorphous silicon thin-film transistors. Journal of Non-Crystalline Solids, 97. 1291-1294 doi:10.1016/0022-3093(87)90309-7
 
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