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McLeod, R. D., Pries, W., Card, H. C., Kao, K. C. (1984) Hydrogenated amorphous silicon for archival storage. Applied Physics Letters, 45 (6). 628-630 doi:10.1063/1.95335

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Reference TypeJournal (article/letter/editorial)
TitleHydrogenated amorphous silicon for archival storage
JournalApplied Physics Letters
AuthorsMcLeod, R. D.Author
Pries, W.Author
Card, H. C.Author
Kao, K. C.Author
Year1984 (September 15)Volume45
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.95335Search in ResearchGate
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Mindat Ref. ID8474658Long-form Identifiermindat:1:5:8474658:6
GUID0
Full ReferenceMcLeod, R. D., Pries, W., Card, H. C., Kao, K. C. (1984) Hydrogenated amorphous silicon for archival storage. Applied Physics Letters, 45 (6). 628-630 doi:10.1063/1.95335
Plain TextMcLeod, R. D., Pries, W., Card, H. C., Kao, K. C. (1984) Hydrogenated amorphous silicon for archival storage. Applied Physics Letters, 45 (6). 628-630 doi:10.1063/1.95335
In(1984, September) Applied Physics Letters Vol. 45 (6) AIP Publishing

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Pries, W., McLeod, R. D., Card, H. C., Kao, K. C. (1984) A mechanism forinsitumonitoring of hydrogen incorporation into amorphous silicon. Applied Physics Letters, 45 (7). 734-736 doi:10.1063/1.95379
Schellenberg, J. J., McLeod, R. D., Mejia, S. R., Card, H. C., Kao, K. C. (1986) Microcrystalline to amorphous transition in silicon from microwave plasmas. Applied Physics Letters, 48 (2). 163-164 doi:10.1063/1.96931
Shufflebotham, P. K., White, J. F., Card, H. C., Kao, K. C. (1986) Activated reactive evaporation of hydrogenated amorphous silicon nitride. Applied Physics Letters, 49 (11). 651-653 doi:10.1063/1.97069
Shufflebotham, P. K., Card, H. C., Kao, K. C., Thanailakis, A. (1986) Amorphous silicon–tellurium alloys. Journal of Applied Physics, 60 (6). 2036-2040 doi:10.1063/1.337205
Kao, K C, McLeod, R D, Leung, C H, Card, H C, Watanabe, H (1983) Dispersion of optical constants of amorphous Si1-xGex(H) films beyond their absorption edges. Journal of Physics D: Applied Physics, 16. 1801-1811 doi:10.1088/0022-3727/16/9/027
Stutzmann, M., Jackson, W. B., Tsai, C. C. (1984) Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 45 (10). 1075-1077 doi:10.1063/1.95020
Kumar, Shailendra, Agarwal, S. C. (1984) Surface photovoltage in hydrogenated amorphous silicon. Applied Physics Letters, 45 (5). 575-577 doi:10.1063/1.95286
Shimakawa, K., Yano, Y. (1984) Residual photocurrent decay in hydrogenated amorphous silicon. Applied Physics Letters, 45 (8). 862-864 doi:10.1063/1.95434
Mejia, S. R., McLeod, R. D., Kao, K. C., Card, H. C. (1986) Electron‐cyclotron‐resonant microwave plasma system for thin‐film deposition. Review of Scientific Instruments, 57 (3). 493-496 doi:10.1063/1.1138915
Herak, T. V., McLeod, R. D., Collett, M. G., Kao, K. C., Card, H. C., Watanabe, H., Katoh, K., Yasui, M., Shibata, Y. (1985) Optical and electronic properties of amorphous SiNx:H alloy films. Canadian Journal of Physics, 63. 846-851 doi:10.1139/p85-137
Mejia, S. R., Chau, T., McLeod, R. D., Kao, K. C., Card, H. C. (1987) Electron cyclotron resonance microwave-plasma etching. Canadian Journal of Physics, 65. 856-858 doi:10.1139/p87-131
 
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