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Rennie, J., Elliott, S. R., Jeynes, C. (1986) Rutherford backscattering study of the photodissolution of Ag in amorphous GeSe2. Applied Physics Letters, 48 (21). 1430-1432 doi:10.1063/1.96879

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Reference TypeJournal (article/letter/editorial)
TitleRutherford backscattering study of the photodissolution of Ag in amorphous GeSe2
JournalApplied Physics Letters
AuthorsRennie, J.Author
Elliott, S. R.Author
Jeynes, C.Author
Year1986 (May 26)Volume48
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.96879Search in ResearchGate
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Mindat Ref. ID8477625Long-form Identifiermindat:1:5:8477625:9
GUID0
Full ReferenceRennie, J., Elliott, S. R., Jeynes, C. (1986) Rutherford backscattering study of the photodissolution of Ag in amorphous GeSe2. Applied Physics Letters, 48 (21). 1430-1432 doi:10.1063/1.96879
Plain TextRennie, J., Elliott, S. R., Jeynes, C. (1986) Rutherford backscattering study of the photodissolution of Ag in amorphous GeSe2. Applied Physics Letters, 48 (21). 1430-1432 doi:10.1063/1.96879
In(1986, May) Applied Physics Letters Vol. 48 (21) AIP Publishing

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Barradas, N. P., Jeynes, C., Webb, R. P. (1997) Simulated annealing analysis of Rutherford backscattering data. Applied Physics Letters, 71 (2). 291-293 doi:10.1063/1.119524
Abelson, J. R., Tsai, C. C., Sigmon, T. W. (1986) Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering. Applied Physics Letters, 49 (14). 850-852 doi:10.1063/1.97514
Satyanarayana, B. S., Hart, A., Milne, W. I., Robertson, J. (1997) Field emission from tetrahedral amorphous carbon. Applied Physics Letters, 71 (10). 1430-1432 doi:10.1063/1.119915
Hack, M., Shur, M. (1986) Limitations to the open circuit voltage of amorphous silicon solar cells. Applied Physics Letters, 49 (21). 1432-1434 doi:10.1063/1.97345
Oehrlein, Gottlieb S. (1986) Rutherford backscattering studies of plasma‐etched silicon. Journal of Applied Physics, 59 (9). 3053-3062 doi:10.1063/1.336928
Schellenberg, J. J., McLeod, R. D., Mejia, S. R., Card, H. C., Kao, K. C. (1986) Microcrystalline to amorphous transition in silicon from microwave plasmas. Applied Physics Letters, 48 (2). 163-164 doi:10.1063/1.96931
Shen, H., Zhou, W., Pamulapati, J., Ren, F. (1999) Photoreflectance study of H2S plasma-passivated GaAs surface. Applied Physics Letters, 74 (10). 1430-1432 doi:10.1063/1.123572
Lee, Wai Peng, Gundabala, Venkata R., Akpa, Belinda S., Johns, Michael L., Jeynes, Chris, Routh, Alexander F. (2006) Distribution of Surfactants in Latex Films:  A Rutherford Backscattering Study. Langmuir, 22. 5314-5320 doi:10.1021/la0601760
Miller, R. C., Savage, A. (1956) Diffusion of Aluminum in Single Crystal Silicon. Journal of Applied Physics, 27 (12). 1430-1432 doi:10.1063/1.1722283
Went, M. R., Vos, M. (2007) Investigation of binary compounds using electron Rutherford backscattering. Applied Physics Letters, 90 (7). 72104pp. doi:10.1063/1.2535986
RENNIE, J, ELLIOTT, S (1985) Kinetics of photo-dissolution of silver in a-GeSe2. Journal of Non-Crystalline Solids, 77. 1161-1164 doi:10.1016/0022-3093(85)90865-8
 
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