Vote for your favorite mineral in #MinCup25! - Dioptase vs. Wavellite
It's a green, green world for kiwi #wavellite vs desert emerald #dioptase.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Street, R. A., Tsai, C. C. (1986) Fast and slow states at the interface of amorphous silicon and silicon nitride. Applied Physics Letters, 48 (24). 1672-1674 doi:10.1063/1.96851

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleFast and slow states at the interface of amorphous silicon and silicon nitride
JournalApplied Physics Letters
AuthorsStreet, R. A.Author
Tsai, C. C.Author
Year1986 (June 16)Volume48
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.96851Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8477812Long-form Identifiermindat:1:5:8477812:3
GUID0
Full ReferenceStreet, R. A., Tsai, C. C. (1986) Fast and slow states at the interface of amorphous silicon and silicon nitride. Applied Physics Letters, 48 (24). 1672-1674 doi:10.1063/1.96851
Plain TextStreet, R. A., Tsai, C. C. (1986) Fast and slow states at the interface of amorphous silicon and silicon nitride. Applied Physics Letters, 48 (24). 1672-1674 doi:10.1063/1.96851
In(1986, June) Applied Physics Letters Vol. 48 (24) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Street, R. A., Thompson, M. J. (1984) Electronic states at the hydrogenated amorphous silicon/silcon nitride interface. Applied Physics Letters, 45 (7). 769-771 doi:10.1063/1.95398
Abelson, J. R., Tsai, C. C., Sigmon, T. W. (1986) Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering. Applied Physics Letters, 49 (14). 850-852 doi:10.1063/1.97514
Gelatos, A. V., Kanicki, J. (1990) Direct observation of the silicon nitride on amorphous silicon interface states. Applied Physics Letters, 56 (10). 940-942 doi:10.1063/1.103271
Iqbal, A., Jackson, W. B., Tsai, C. C., Allen, J. W., Bates, C. W. (1987) Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy. Journal of Applied Physics, 61 (8). 2947-2954 doi:10.1063/1.337842
Beaudoin, M., Arsenault, C. J., Izquierdo, R., Meunier, M. (1989) Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy. Applied Physics Letters, 55 (25). 2640-2642 doi:10.1063/1.102299
Stutzmann, M., Street, R. A., Tsai, C. C., Boyce, J. B., Ready, S. E. (1989) Structural, optical, and spin properties of hydrogenated amorphous silicon‐germanium alloys. Journal of Applied Physics, 66 (2). 569-592 doi:10.1063/1.343574
Matsumoto, Tomotaka, Murata, Yuji, Watanabe, Jun‐ichi (1992) Study of silicon‐hydrogen bonds at an amorphous silicon/silicon nitride interface using infrared attenuated total reflection spectroscopy. Applied Physics Letters, 60 (16). 1942-1944 doi:10.1063/1.107158
Stivers, A. R., Sah, C. T. (1980) A study of oxide traps and interface states of the silicon‐silicon dioxide interface. Journal of Applied Physics, 51 (12). 6292-6304 doi:10.1063/1.327617
Hack, M., Shur, M., Tsai, C. C. (1989) Amorphous silicon photoconductive diode. Applied Physics Letters, 54 (2). 96-98 doi:10.1063/1.101200
Palsule, C., Paschen, U., Cohen, J. D., Yang, J., Guha, S. (1997) Evidence for hole traps at the amorphous silicon/amorphous silicon–germanium heterostructure interface. Applied Physics Letters, 70 (4). 499-501 doi:10.1063/1.118192
Yang, L., Chen, L. (1993) ‘‘Fast’’ and ‘‘slow’’ metastable defects in hydrogenated amorphous silicon. Applied Physics Letters, 63 (3). 400-402 doi:10.1063/1.110031
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 10, 2025 06:28:51
Go to top of page