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Szklarczyk, Marek, Allen, Roland E. (1986) Interpretation of quantum yields exceeding unity in photoelectrochemical systems. Applied Physics Letters, 49 (16). 1028-1030 doi:10.1063/1.97461

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Reference TypeJournal (article/letter/editorial)
TitleInterpretation of quantum yields exceeding unity in photoelectrochemical systems
JournalApplied Physics Letters
AuthorsSzklarczyk, MarekAuthor
Allen, Roland E.Author
Year1986 (October 20)Volume49
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.97461Search in ResearchGate
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Mindat Ref. ID8478557Long-form Identifiermindat:1:5:8478557:6
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Full ReferenceSzklarczyk, Marek, Allen, Roland E. (1986) Interpretation of quantum yields exceeding unity in photoelectrochemical systems. Applied Physics Letters, 49 (16). 1028-1030 doi:10.1063/1.97461
Plain TextSzklarczyk, Marek, Allen, Roland E. (1986) Interpretation of quantum yields exceeding unity in photoelectrochemical systems. Applied Physics Letters, 49 (16). 1028-1030 doi:10.1063/1.97461
In(1986, October) Applied Physics Letters Vol. 49 (16) AIP Publishing

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Szklarczyk, Marek, Bockris, John O’M. (1983) Photoelectrocatalysis on silicon in solar light. Applied Physics Letters, 42 (12). 1035-1036 doi:10.1063/1.93833
Jurbergs, David, Rogojina, Elena, Mangolini, Lorenzo, Kortshagen, Uwe (2006) Silicon nanocrystals with ensemble quantum yields exceeding 60%. Applied Physics Letters, 88 (23). 233116pp. doi:10.1063/1.2210788
Kolodinski, Sabine, Werner, Jürgen H., Wittchen, Thomas, Queisser, Hans J. (1993) Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells. Applied Physics Letters, 63 (17). 2405-2407 doi:10.1063/1.110489
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Allen, Roland E. (1971) Remarks on the Everett-Wheeler Interpretation of Quantum Mechanics. American Journal of Physics, 39. 842-843 doi:10.1119/1.1986299
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Oberli, D. Y., Shah, J., Jewell, J. L., Damen, T. C., Chand, N. (1989) Dynamics of carrier capture in an InGaAs/GaAs quantum well trap. Applied Physics Letters, 54 (11). 1028-1030 doi:10.1063/1.100788
Serreze, H. B., Marek, H. S. (1986) Zn diffusion in InP: Effect of substrate dopant concentration. Applied Physics Letters, 49 (4). 210-211 doi:10.1063/1.97173
Leamy, H. J., Doherty, C. J. (1980) Nucleation‐controlled overgrowth of silicon on silica. Applied Physics Letters, 37 (11). 1028-1030 doi:10.1063/1.91752
Wedding, Berthold, Jäger, Dieter (1982) Bistability observed in a Fabry–Perot interferometer with quadratic nonlinear medium. Applied Physics Letters, 41 (11). 1028-1030 doi:10.1063/1.93399
Itoh, Kunio, Ishikawa, Kiyotsugu, Teramoto, Iwao (1978) An embedded stripe DH laser monolithically integrated with a strip waveguide. Journal of Applied Physics, 49 (3). 1028-1030 doi:10.1063/1.325039
 
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