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(1987, January) Applied Physics Letters Vol. 50 (2) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1987 (January)Volume50
Issue<   2   >
PublisherAIP Publishing
Mindat Ref. ID8480056Long-form Identifiermindat:1:5:8480056:5
GUID0
Full Reference(1987, January) Applied Physics Letters Vol. 50 (2) AIP Publishing
Plain Text(1987, January) Applied Physics Letters Vol. 50 (2) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 50. AIP Publishing

Contains

Sapia, A., Spano, P., Daino, B. (1987) Polarization switching in semiconductor lasers driven via injection from an external radiation. Applied Physics Letters, 50 (2). 57-59 doi:10.1063/1.97871
Kimura, W. D., Guyer, Dean R., Moody, S. E., Seamans, J. F., Ford, D. H. (1987) Electron density measurements of electron‐beam‐pumped XeF and KrF laser mixtures. Applied Physics Letters, 50 (2). 60-62 doi:10.1063/1.97872
Tsang, W. T. (1987) GaInAsP/InP double heterostructure lasers emitting at 1.5 Îźm grown by chemical beam epitaxy. Applied Physics Letters, 50 (2). 63-65 doi:10.1063/1.97873
Kawaguchi, Hitoshi, Magari, Katsuaki, Oe, Kunishige, Noguchi, Yoshio, Nakano, Yoshinori, Motosugi, George (1987) Optical frequency‐selective amplification in a distributed feedback type semiconductor laser amplifier. Applied Physics Letters, 50 (2). 66-67 doi:10.1063/1.97874
Faist, J., Reinhart, F.‐K., Martin, D., Tuncel, E. (1987) Orientation dependence of the phase modulation in ap‐njunction GaAs/AlxGa1−xAs waveguide. Applied Physics Letters, 50 (2). 68-70 doi:10.1063/1.97875
Oomori, T., Ono, K., Fujita, S., Murai, Y. (1987) Ion beam generation by field ionization of laser‐excited Rydberg atoms. Applied Physics Letters, 50 (2). 71-73 doi:10.1063/1.97876
Crean, G. M., Golanski, A., Oberlin, J. C. (1987) Effective elastic constants of thin‐film tungsten‐silicide from surface acoustic wave analysis. Applied Physics Letters, 50 (2). 74-76 doi:10.1063/1.97823
SpringThorpe, A. J., Ingrey, S. J., Emmerstorfer, B., Mandeville, P., Moore, W. T. (1987) Measurement of GaAs surface oxide desorption temperatures. Applied Physics Letters, 50 (2). 77-79 doi:10.1063/1.97824
Young, E. M., Tiller, William A. (1987) Ultraviolet light stimulated thermal oxidation of silicon. Applied Physics Letters, 50 (2). 80-82 doi:10.1063/1.97825
Brown, E. R., Sollner, T. C. L. G., Goodhue, W. D., Parker, C. D. (1987) Millimeter‐band oscillations based on resonant tunneling in a double‐barrier diode at room temperature. Applied Physics Letters, 50 (2). 83-85 doi:10.1063/1.97826
Inada, Tomoki, Fujii, Takashi, Eguchi, Minoru, Fukuda, Tsuguo (1987) Technique for the direct synthesis and growth of indium phosphide by the liquid phosphorus encapsulated Czochralski method. Applied Physics Letters, 50 (2). 86-88 doi:10.1063/1.97827
Berruyer, Pascale, Bruel, Michel (1987) Nitrogen implantation for local inhibition of oxidation. Applied Physics Letters, 50 (2). 89-91 doi:10.1063/1.97828
Arakawa, Y., Smith, J. S., Yariv, A., Otsuka, N., Choi, C., Gu, B. P., Venkatesan, T. (1987) Transmission electron microscopy and photoluminescence study of silicon and boron ion implanted GaAs/GaAlAs quantum wells. Applied Physics Letters, 50 (2). 92-94 doi:10.1063/1.97829
White, Alice E., Short, K. T., Dynes, R. C., Garno, J. P., Gibson, J. M. (1987) Mesotaxy: Single‐crystal growth of buried CoSi2layers. Applied Physics Letters, 50 (2). 95-97 doi:10.1063/1.97830
Levi, A. F. J., Hayes, J. R., Gossard, A. C., English, J. H. (1987) Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor. Applied Physics Letters, 50 (2). 98-100 doi:10.1063/1.97831
Frye, R. C., Kumler, J. J., Wong, C. C. (1987) Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopy. Applied Physics Letters, 50 (2). 101-103 doi:10.1063/1.97866
Liang, M.‐S., Choi, J. Y. (1987) Thickness dependence of oxide breakdown under high field and current stress. Applied Physics Letters, 50 (2). 104-106 doi:10.1063/1.97867
Wood, R. F., Westbrook, R. D., Jellison, G. E. (1987) 18% efficient intrinsically passivated laser‐processed silicon solar cells. Applied Physics Letters, 50 (2). 107-109 doi:10.1063/1.97868
Choi, K. K., Tsui, D. C., Alavi, K. (1987) Experimental determination of the edge depletion width of ahe two‐dimensional electron gas in GaAs/AlxGa1−xAs. Applied Physics Letters, 50 (2). 110-112 doi:10.1063/1.97869
Meyerson, B. S., LeGoues, F. K., Nguyen, T. N., Harame, D. L. (1987) Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films. Applied Physics Letters, 50 (2). 113-115 doi:10.1063/1.98255
Meisner, G. P. (1987) Magnetic and structural properties of melt‐spun erbium‐iron‐boron ribbons. Applied Physics Letters, 50 (2). 116-117 doi:10.1063/1.97870

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