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Mori, H., Ogasawara, M., Yamamoto, M., Tachikawa, M. (1987) New hydride vapor phase epitaxy for GaP growth on Si. Applied Physics Letters, 51 (16). 1245-1247 doi:10.1063/1.98693

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Reference TypeJournal (article/letter/editorial)
TitleNew hydride vapor phase epitaxy for GaP growth on Si
JournalApplied Physics Letters
AuthorsMori, H.Author
Ogasawara, M.Author
Yamamoto, M.Author
Tachikawa, M.Author
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98693Search in ResearchGate
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Mindat Ref. ID8481148Long-form Identifiermindat:1:5:8481148:2
GUID0
Full ReferenceMori, H., Ogasawara, M., Yamamoto, M., Tachikawa, M. (1987) New hydride vapor phase epitaxy for GaP growth on Si. Applied Physics Letters, 51 (16). 1245-1247 doi:10.1063/1.98693
Plain TextMori, H., Ogasawara, M., Yamamoto, M., Tachikawa, M. (1987) New hydride vapor phase epitaxy for GaP growth on Si. Applied Physics Letters, 51 (16). 1245-1247 doi:10.1063/1.98693
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

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Kawamura, Tomoaki, Takenaka, Hisataka, Hayashi, Takayoshi, Tachikawa, Masami, Mori, Hidefumi (1996) Initial domain structure of hydride vapor phase epitaxy GaAs/Si(001) by using x‐ray standing waves. Applied Physics Letters, 68 (14). 1969-1971 doi:10.1063/1.115642
Tachikawa, Masami, Yamada, Takeshi, Sasaki, Tohru, Mori, Hidefumi, Kadota, Yoshiaki (1995) Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l657
Cobden, D. H., Uren, M. J., Kirton, M. J. (1990) Entropy measurements on slow Si/SiO2interface states. Applied Physics Letters, 56 (13). 1245-1247 doi:10.1063/1.102527
Lee, M. K., Hu, C. C., Lin, M. H. (1993) Metalorganic chemical vapor deposition of InP using phosphine modulation. Applied Physics Letters, 62 (11). 1245-1247 doi:10.1063/1.108747
Paszuk, A., BrĂźckner, S., Steidl, M., Zhao, W., Dobrich, A., Supplie, O., Kleinschmidt, P., Prost, W., Hannappel, T. (2015) Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth. Applied Physics Letters, 106 (23). 231601pp. doi:10.1063/1.4922275
Sasaki, T., Enoki, T., Tachikawa, M., Sugo, M., Mori, H. (1994) InAlAs/InGaAs metal‐semiconductor‐metal photodiodes heteroepitaxially grown on Si substrates. Applied Physics Letters, 64 (6). 751-753 doi:10.1063/1.111055
Aina, Leye, Mattingly, M., Potter, Bob (1987) High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (21). 1735-1737 doi:10.1063/1.98559
Armitage, R., Hirayama, H. (2008) M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy. Applied Physics Letters, 92 (9). 92121pp. doi:10.1063/1.2894509
Trumbore, F. A., Kowalchik, M., White, H. G. (1967) Efficient Electroluminescence in GaP p‐n Junctions Grown by Liquid‐Phase Epitaxy on Vapor‐Grown Substrates. Journal of Applied Physics, 38 (4). 1987-1988 doi:10.1063/1.1709804
Jayapalan, J., Skromme, B. J., Vaudo, R. P., Phanse, V. M. (1998) Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy. Applied Physics Letters, 73 (9). 1188-1190 doi:10.1063/1.122123
Jasinski, J., Swider, W., Liliental-Weber, Z., Visconti, P., Jones, K. M., Reshchikov, M. A., Yun, F., Morkoç, H., Park, S. S., Lee, K. Y. (2001) Characterization of free-standing hydride vapor phase epitaxy GaN. Applied Physics Letters, 78 (16). 2297-2299 doi:10.1063/1.1359779
 
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