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Maki, P. A., Ehrlich, D. J. (1987) Excimer laserinsitutreatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes. Applied Physics Letters, 51 (16). 1274-1276 doi:10.1063/1.98703

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Reference TypeJournal (article/letter/editorial)
TitleExcimer laserinsitutreatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes
JournalApplied Physics Letters
AuthorsMaki, P. A.Author
Ehrlich, D. J.Author
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98703Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481168Long-form Identifiermindat:1:5:8481168:6
GUID0
Full ReferenceMaki, P. A., Ehrlich, D. J. (1987) Excimer laserinsitutreatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes. Applied Physics Letters, 51 (16). 1274-1276 doi:10.1063/1.98703
Plain TextMaki, P. A., Ehrlich, D. J. (1987) Excimer laserinsitutreatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes. Applied Physics Letters, 51 (16). 1274-1276 doi:10.1063/1.98703
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

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Maki, P. A., Ehrlich, D. J. (1989) Laser bilayer etching of GaAs surfaces. Applied Physics Letters, 55 (2). 91-93 doi:10.1063/1.102097
Uchida, Yoko, Yokotsuka, Tatsuo, Nakashima, Hisao, Takatani, Shinichiro (1987) Electrical properties of thermally stable LaB6/GaAs Schottky diodes. Applied Physics Letters, 50 (11). 670-672 doi:10.1063/1.98061
Olego, D. J. (1987) Effects of ZnSe epitaxial growth on the surface properties of GaAs. Applied Physics Letters, 51 (18). 1422-1424 doi:10.1063/1.98644
Yablonovitch, E., Sandroff, C. J., Bhat, R., Gmitter, T. (1987) Nearly ideal electronic properties of sulfide coated GaAs surfaces. Applied Physics Letters, 51 (6). 439-441 doi:10.1063/1.98415
Waldrop, J. R. (1982) Interface chemistry and electrical properties of tungsten Schottky‐barrier contacts to GaAs. Applied Physics Letters, 41 (4). 350-352 doi:10.1063/1.93509
Yang, J. J. J., Dapkus, P. D., Dupuis, R. D., Yingling, R. D. (1980) Electrical properties of polycrystalline GaAs films. Journal of Applied Physics, 51 (7). 3794-3800 doi:10.1063/1.328117
Yao, Takafumi (1987) Thermal properties of AlAs/GaAs superlattices. Applied Physics Letters, 51 (22). 1798-1800 doi:10.1063/1.98526
Kirby, P. B., Kerr, T. M. (1987) Electrical measurements onn+‐GaAs/undoped AlAs/n‐GaAs andn+‐GaAs/undoped AlAs:GaAs superlattice/n‐GaAs capacitors. Applied Physics Letters, 50 (25). 1808-1810 doi:10.1063/1.97704
Goodhue, W. D., Pang, S. W., Johnson, G. D., Astolfi, D. K., Ehrlich, D. J. (1987) Nanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching. Applied Physics Letters, 51 (21). 1726-1728 doi:10.1063/1.98557
Petykiewicz, Jan, Shambat, Gary, Ellis, Bryan, Vučković, Jelena (2012) Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes. Applied Physics Letters, 101 (1). 11104pp. doi:10.1063/1.4732782
Zussman, A. (1986) Electrical properties of Schottky diodes of Ti on highly doped GaAs. Journal of Applied Physics, 59 (11). 3894-3900 doi:10.1063/1.336732
 
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