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Jackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D. (1987) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation. Applied Physics Letters, 51 (20). 1629-1631 doi:10.1063/1.98577

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Reference TypeJournal (article/letter/editorial)
TitleStripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation
JournalApplied Physics Letters
AuthorsJackson, G. S.Author
Pan, N.Author
Feng, M. S.Author
Stillman, G. E.Author
Holonyak, N.Author
Burnham, R. D.Author
Year1987 (November 16)Volume51
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.98577Search in ResearchGate
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Mindat Ref. ID8481480Long-form Identifiermindat:1:5:8481480:5
GUID0
Full ReferenceJackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D. (1987) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation. Applied Physics Letters, 51 (20). 1629-1631 doi:10.1063/1.98577
Plain TextJackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D. (1987) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation. Applied Physics Letters, 51 (20). 1629-1631 doi:10.1063/1.98577
In(1987, November) Applied Physics Letters Vol. 51 (20) AIP Publishing

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Deppe, D. G., Jackson, G. S., Holonyak, N., Burnham, R. D., Thornton, R. L. (1987) Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering. Applied Physics Letters, 50 (11). 632-634 doi:10.1063/1.98103
Jackson, G. S., Holonyak, N., Hall, D. C., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers. Journal of Applied Physics, 62 (2). 381-385 doi:10.1063/1.339808
Guido, L. J., Plano, W. E., Jackson, G. S., Holonyak, N., Burnham, R. D., Epler, J. E. (1987) Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−ybarriers. Applied Physics Letters, 50 (12). 757-759 doi:10.1063/1.98036
Gavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M., Burnham, R. D. (1985) Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 47 (9). 903-905 doi:10.1063/1.95973
Meehan, K., Gavrilović, P., Holonyak, N., Burnham, R. D., Thornton, R. L. (1985) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering. Applied Physics Letters, 46 (1). 75-77 doi:10.1063/1.95859
Dallesasse, J. M., Holonyak, N. (1991) Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers. Applied Physics Letters, 58 (4). 394-396 doi:10.1063/1.104645
Deppe, D. G., Guido, L. J., Holonyak, N., Hsieh, K. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion. Applied Physics Letters, 49 (9). 510-512 doi:10.1063/1.97133
Dallesasse, J. M., Holonyak, N., Hall, D. C., El‐Zein, N., Sugg, A. R., Smith, S. C., Burnham, R. D. (1991) Native‐oxide‐defined coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers. Applied Physics Letters, 58 (8). 834-836 doi:10.1063/1.104504
Guido, L. J., Jackson, G. S., Hall, D. C., Plano, W. E., Holonyak, N. (1988) Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 52 (7). 522-524 doi:10.1063/1.99403
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1986) Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 49 (14). 883-885 doi:10.1063/1.97524
Jackson, G. S., Deppe, D. G., Hsieh, K. C., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x‘‘barriers’’. Applied Physics Letters, 48 (17). 1156-1158 doi:10.1063/1.96455
 
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