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Hwang, J., Pianetta, P., Shih, C. K., Spicer, W. E., Pao, Y.‐C., Harris, J. S. (1987) Determination of the natural valence‐band offset in the InxGa1−xAs system. Applied Physics Letters, 51 (20). 1632-1633 doi:10.1063/1.98578

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the natural valence‐band offset in the InxGa1−xAs system
JournalApplied Physics Letters
AuthorsHwang, J.Author
Pianetta, P.Author
Shih, C. K.Author
Spicer, W. E.Author
Pao, Y.‐C.Author
Harris, J. S.Author
Year1987 (November 16)Volume51
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.98578Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481483Long-form Identifiermindat:1:5:8481483:2
GUID0
Full ReferenceHwang, J., Pianetta, P., Shih, C. K., Spicer, W. E., Pao, Y.‐C., Harris, J. S. (1987) Determination of the natural valence‐band offset in the InxGa1−xAs system. Applied Physics Letters, 51 (20). 1632-1633 doi:10.1063/1.98578
Plain TextHwang, J., Pianetta, P., Shih, C. K., Spicer, W. E., Pao, Y.‐C., Harris, J. S. (1987) Determination of the natural valence‐band offset in the InxGa1−xAs system. Applied Physics Letters, 51 (20). 1632-1633 doi:10.1063/1.98578
In(1987, November) Applied Physics Letters Vol. 51 (20) AIP Publishing

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Hwang, J., Shih, C. K., Pianetta, P., Kubiak, G. D., Stulen, R. H., Dawson, L. R., Pao, Y.‐C., Harris, J. S. (1988) Effect of strain on the band structure of GaAs and In0.2Ga0.8As. Applied Physics Letters, 52 (4). 308-310 doi:10.1063/1.99502
Shih, C. K., Spicer, W. E. (1987) Determination of a natural valence-band offset: The case of HgTe-CdTe. Physical Review Letters, 58 (24). 2594-2597 doi:10.1103/physrevlett.58.2594
Jogai, B. (1991) Valence‐band offset in strained GaAs‐InxGa1−xAs superlattices. Applied Physics Letters, 59 (11). 1329-1331 doi:10.1063/1.105490
Shan, W., Hwang, S. J., Song, J. J., Hou, H. Q., Tu, C. W. (1993) Valence band offset of GaAs/GaAs0.68P0.32multiple quantum wells. Applied Physics Letters, 62 (17). 2078-2080 doi:10.1063/1.109484
Hwang, J., Pianetta, P., Pao, Y. -C., Shih, C. K., Shen, Z. -X., Lindberg, P. A. P., Chow, R. (1988) k-Resolved Alloy Bowing in PseudobinaryInxGa1−xAsAlloys. Physical Review Letters, 61 (7). 877-880 doi:10.1103/physrevlett.61.877
Zou, Y., Grodzinski, P., Menu, E. P., Jeong, W. G., Dapkus, P. D., Alwan, J. J., Coleman, J. J. (1991) Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well. Applied Physics Letters, 58 (6). 601-603 doi:10.1063/1.104570
Kuan, T. S., Wang, W. I., Wilkie, E. L. (1987) Long‐range order in InxGa1−xAs. Applied Physics Letters, 51 (1). 51-53 doi:10.1063/1.98884
Chang, J. R., Su, Y. K., Lu, Y. T., Jaw, D. H., Shiao, H. P., Lin, W. (1999) Determination of the valence-band offset for GaInAsSb/InP heterostructure. Applied Physics Letters, 74 (5). 717-719 doi:10.1063/1.123101
Chow, D. H., McCaldin, J. O., Bonnefoi, A. R., McGill, T. C., Sou, I. K., Faurie, J. P. (1987) Electrical determination of the valence‐band discontinuity in HgTe‐CdTe heterojunctions. Applied Physics Letters, 51 (26). 2230-2232 doi:10.1063/1.98949
Diamond, S. K., Özbay, E., Rodwell, M. J. W., Bloom, D. M., Pao, Y. C., Harris, J. S. (1989) Resonant tunneling diodes for switching applications. Applied Physics Letters, 54 (2). 153-155 doi:10.1063/1.101213
Lockwood, D. J., Dharma‐wardana, M. W. C., Moore, W. T., Devine, R. L. S. (1987) Raman scattering study of folded acoustic phonons in GaAs/InxGa1−xAs strained‐layer superlattices. Applied Physics Letters, 51 (5). 361-363 doi:10.1063/1.98441
 
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