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Ikeda, M., Sato, H., Ohata, T., Nakano, K., Toda, A., Kumagai, O., Kojima, C. (1987) 680‐nm band GaInP/AlGaInP tapered stripe laser. Applied Physics Letters, 51 (20). 1572-1573 doi:10.1063/1.98610

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Reference TypeJournal (article/letter/editorial)
Title680‐nm band GaInP/AlGaInP tapered stripe laser
JournalApplied Physics Letters
AuthorsIkeda, M.Author
Sato, H.Author
Ohata, T.Author
Nakano, K.Author
Toda, A.Author
Kumagai, O.Author
Kojima, C.Author
Year1987 (November 16)Volume51
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.98610Search in ResearchGate
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Mindat Ref. ID8481500Long-form Identifiermindat:1:5:8481500:8
GUID0
Full ReferenceIkeda, M., Sato, H., Ohata, T., Nakano, K., Toda, A., Kumagai, O., Kojima, C. (1987) 680‐nm band GaInP/AlGaInP tapered stripe laser. Applied Physics Letters, 51 (20). 1572-1573 doi:10.1063/1.98610
Plain TextIkeda, M., Sato, H., Ohata, T., Nakano, K., Toda, A., Kumagai, O., Kojima, C. (1987) 680‐nm band GaInP/AlGaInP tapered stripe laser. Applied Physics Letters, 51 (20). 1572-1573 doi:10.1063/1.98610
In(1987, November) Applied Physics Letters Vol. 51 (20) AIP Publishing

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Ikeda, M., Toda, A., Nakano, K., Mori, Y., Watanabe, N. (1987) Room‐temperature continuous‐wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (16). 1033-1034 doi:10.1063/1.97961
Toda, A., Nakano, K., Yamamoto, T., Ikeda, M. (1995) Photoluminescence characteristics of Se‐doped GaInP/AlGaInP double heterostructures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 66 (25). 3483-3485 doi:10.1063/1.113771
Ikeda, Masao, Nakano, Kazushi, Toda, Atsushi, Mori, Yoshifumi, Kojima, Chiaki (1987) AlGaInP Visible Semiconductor Lasers. Japanese Journal of Applied Physics, 26. 101 doi:10.7567/jjaps.26s4.101
Kumagai, Osamu, Ohata, Toshiharu, Sato, Hiromitsu, Horii, Shinichi, Mamine, Takayoshi, Kojima, Chiaki (1987) A High-power Tapered-SAN Laser for an Optical Pick-up. Japanese Journal of Applied Physics, 26. 107 doi:10.7567/jjaps.26s4.107
Ikeda, Masao, Nakano, Kazushi, Mori, Yoshifumi, Kaneko, Kunio, Watanabe, Naozo (1986) Room‐temperature continuous‐wave operation of an AlGaInP mesa stripe laser. Applied Physics Letters, 48 (2). 89-91 doi:10.1063/1.96944
Liedenbaum, C. T. H. F., Valster, A., Severens, A. L. G. J., Hooft, G. W. ’t (1990) Determination of the GaInP/AlGaInP band offset. Applied Physics Letters, 57 (25). 2698-2700 doi:10.1063/1.104193
Domen, K., Ishikawa, H., Sugawara, M., Kondo, M., Tanahashi, T. (1995) Effect of spin‐orbit split‐off band on optical gain in AlGaInP/GaInP strained quantum wells. Applied Physics Letters, 66 (4). 466-468 doi:10.1063/1.114058
Tanaka, T., Uchida, K., Ishitani, Y., Minagawa, S. (1995) Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates. Applied Physics Letters, 66 (7). 783-785 doi:10.1063/1.114187
Asano, T., Takeya, M., Tojyo, T., Mizuno, T., Ikeda, S., Shibuya, K., Hino, T., Uchida, S., Ikeda, M. (2002) High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio. Applied Physics Letters, 80 (19). 3497-3499 doi:10.1063/1.1478157
Nakano, K., Toda, A., Yamamoto, T., Ishibashi, A. (1992) Effects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 61 (16). 1959-1961 doi:10.1063/1.108376
Takigawa, S., Kume, M., Hamada, K., Tateoka, K., Naitoh, H., Yoshikawa, N., Yamamoto, A., Shimizu, H., Itoh, K. (1987) Continuous room‐temperature operation of a 759‐nm GaAlAs distributed feedback laser. Applied Physics Letters, 51 (20). 1580-1581 doi:10.1063/1.98560
 
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