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Won, T., Munns, G., Houdré, R., Morkoç, H. (1987) Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett.49, 1257 (1986)]. Applied Physics Letters, 51 (21). 1756 doi:10.1063/1.98514

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett.49, 1257 (1986)]
JournalApplied Physics Letters
AuthorsWon, T.Author
Munns, G.Author
Houdré, R.Author
Morkoç, H.Author
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98514Search in ResearchGate
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Mindat Ref. ID8481520Long-form Identifiermindat:1:5:8481520:2
GUID0
Full ReferenceWon, T., Munns, G., Houdré, R., Morkoç, H. (1987) Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett.49, 1257 (1986)]. Applied Physics Letters, 51 (21). 1756 doi:10.1063/1.98514
Plain TextWon, T., Munns, G., Houdré, R., Morkoç, H. (1987) Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett.49, 1257 (1986)]. Applied Physics Letters, 51 (21). 1756 doi:10.1063/1.98514
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

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Won, T., Munns, G., Houdré, R., Morkoç, H. (1986) Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers. Applied Physics Letters, 49 (19). 1257-1259 doi:10.1063/1.97379
Masselink, W. T., Fischer, R., Klem, J., Henderson, T., Pearah, P., Morkoç, H. (1984) Polar semiconductor quantum wells on nonpolar substrates: (Al,Ga)As/GaAs on (100)Ge. Applied Physics Letters, 45 (4). 457-459 doi:10.1063/1.95214
Reddy, U. K., Houdré, R., Munns, G., Ji, G., Morkoç, H., Longerbone, M., Davis, L., Gu, B. P., Otsuka, N. (1987) Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy. Journal of Applied Physics, 62 (12). 4858-4862 doi:10.1063/1.339832
Unlu, M. S., Munns, G., Chen, J., Won, T., Unlu, H., Morkoç, H., Radhakrishnan, G., Katz, J., Verret, D. (1987) Characteristics of annealedp/njunctions between GaAs and Si (100). Applied Physics Letters, 51 (24). 1995-1997 doi:10.1063/1.98322
d’Heurle, F. M., Thomas, O. (1988) Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2grown on Si(111)’’ [Appl. Phys. Lett.50, 1257 (1987)]. Applied Physics Letters, 52 (26). 2269 doi:10.1063/1.99772
Fang, P. H. (1987) Comment on ‘‘Diffusion model for the laser oxidation of metallic samples in air’’ [Appl. Phys. Lett.49, 109 (1987)]. Applied Physics Letters, 51 (24). 2062 doi:10.1063/1.98293
Vatarescu, A. (1987) Comment on ‘‘Nonlinear coupling of waveguide modes’’ [Appl. Phys. Lett.50, 801 (1987)]. Applied Physics Letters, 51 (20). 1645 doi:10.1063/1.98583
Ikezi, H., Lin‐Liu, Y. R., Ohkawa, T. (1987) Comment on ‘‘Channeling radiation from strained‐layer superlattices’’ [Appl. Phys. Lett.48, 1075 (1986)]. Applied Physics Letters, 50 (11). 699 doi:10.1063/1.98071
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Kubena, R. L., Ward, J. W. (1988) Comment on ‘‘Current‐density profiles for a Ga+ion microprobe and their lithographic implications’’ [Appl. Phys. Lett.51, 1960 (1987)]. Applied Physics Letters, 52 (24). 2089 doi:10.1063/1.99566
Reddy, U. K., Ji, G., Huang, D., Munns, G., Morkoç, H. (1987) Investigation of GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs superlattices on Si substrates. Applied Physics Letters, 50 (24). 1748-1750 doi:10.1063/1.98250
 
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