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Yamashita, S., Nakatsuka, S., Tanaka, T., Ono, Y., Chinone, N., Kajimura, T. (1987) GaAlAs gain‐guided semiconductor lasers with a curved facet. Applied Physics Letters, 51 (21). 1667-1669 doi:10.1063/1.98537

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Reference TypeJournal (article/letter/editorial)
TitleGaAlAs gain‐guided semiconductor lasers with a curved facet
JournalApplied Physics Letters
AuthorsYamashita, S.Author
Nakatsuka, S.Author
Tanaka, T.Author
Ono, Y.Author
Chinone, N.Author
Kajimura, T.Author
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98537Search in ResearchGate
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Mindat Ref. ID8481528Long-form Identifiermindat:1:5:8481528:4
GUID0
Full ReferenceYamashita, S., Nakatsuka, S., Tanaka, T., Ono, Y., Chinone, N., Kajimura, T. (1987) GaAlAs gain‐guided semiconductor lasers with a curved facet. Applied Physics Letters, 51 (21). 1667-1669 doi:10.1063/1.98537
Plain TextYamashita, S., Nakatsuka, S., Tanaka, T., Ono, Y., Chinone, N., Kajimura, T. (1987) GaAlAs gain‐guided semiconductor lasers with a curved facet. Applied Physics Letters, 51 (21). 1667-1669 doi:10.1063/1.98537
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

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Uomi, K., Nakatsuka, S., Ohtoshi, T., Ono, Y., Chinone, N., Kajimura, T. (1984) High‐power operation of index‐guided visible GaAs/GaAlAs multiquantum well lasers. Applied Physics Letters, 45 (8). 818-820 doi:10.1063/1.95429
Ohtoshi, T., Uomi, K., Chinone, N., Kajimura, T., Murayama, Y. (1985) Calculated gain and spontaneous spectra of multi‐quantum‐well lasers. Journal of Applied Physics, 57 (3). 992-994 doi:10.1063/1.334708
Uomi, K., Mishima, T., Chinone, N. (1987) Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highlyp‐doped GaAs/GaAlAs multiple quantum well lasers. Applied Physics Letters, 51 (2). 78-80 doi:10.1063/1.98603
Tanaka, T., Minagawa, S., Kajimura, T. (1989) Transverse‐mode‐stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch‐stop layer. Applied Physics Letters, 54 (15). 1391-1393 doi:10.1063/1.100676
Tanaka, T., Kawano, T., Kajimura, T. (1988) High‐power operation in self‐sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer. Applied Physics Letters, 53 (25). 2471-2473 doi:10.1063/1.100216
Tanaka, T., Yanagisawa, H., Kakibayashi, H., Minagawa, S., Kajimura, T. (1991) Uniformp‐type impurity‐doped multiquantum well AlGaInP semiconductor lasers with a lasing wavelength of 633 nm at 20 °C. Applied Physics Letters, 59 (16). 1943-1945 doi:10.1063/1.106143
Tang, C. L., Schremer, A., Fujita, T. (1987) Bistability in two‐mode semiconductor lasers via gain saturation. Applied Physics Letters, 51 (18). 1392-1394 doi:10.1063/1.98686
Kajimura, T., Kuroda, T., Yamashita, S., Todokoro, H., Nakamura, M., Mizuishi, K., Umeda, J. (1979) Degradation of Ga1−xAlxAs visible diode lasers. Applied Physics Letters, 35 (12). 928-930 doi:10.1063/1.91008
Kapon, E., Lindsey, C. P., Smith, J. S., Margalit, S., Yariv, A. (1984) Inverted‐V chirped phased arrays of gain‐guided GaAs/GaAlAs diode lasers. Applied Physics Letters, 45 (12). 1257-1259 doi:10.1063/1.95117
Toda, A., Kobayashi, T., Dohsen, M., Mori, Y. (1993) Gain‐guided laser diode having a curved‐mirror‐cavity with a low astigmatism. Applied Physics Letters, 63 (6). 726-728 doi:10.1063/1.109941
Ohtoshi, Tsukuru, Kawano, Toshihiro, Sasaki, Yoshimitsu, Kajimura, Takashi, Chinone, Naoki, Nakamura, Michiharu (1984) High‐power visible GaAlAs lasers with self‐aligned strip buried heterostructure. Journal of Applied Physics, 56 (9). 2491-2496 doi:10.1063/1.334311
 
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