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Itoh, Kiminori, Matsumoto, Hidetoshi, Kobata, Tsuyoshi, Fujishima, Akira, Nakamura, Osamu, Fukui, Keitaro (1987) Determining height of a leaky Schottky barrier existing in the junction between SnO2and a highly dopedp‐type amorphous SiC by using the pulsed laser‐induced transient photopotential technique. Applied Physics Letters, 51 (21). 1685-1686 doi:10.1063/1.98543

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Reference TypeJournal (article/letter/editorial)
TitleDetermining height of a leaky Schottky barrier existing in the junction between SnO2and a highly dopedp‐type amorphous SiC by using the pulsed laser‐induced transient photopotential technique
JournalApplied Physics Letters
AuthorsItoh, KiminoriAuthor
Matsumoto, HidetoshiAuthor
Kobata, TsuyoshiAuthor
Fujishima, AkiraAuthor
Nakamura, OsamuAuthor
Fukui, KeitaroAuthor
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98543Search in ResearchGate
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Mindat Ref. ID8481540Long-form Identifiermindat:1:5:8481540:6
GUID0
Full ReferenceItoh, Kiminori, Matsumoto, Hidetoshi, Kobata, Tsuyoshi, Fujishima, Akira, Nakamura, Osamu, Fukui, Keitaro (1987) Determining height of a leaky Schottky barrier existing in the junction between SnO2and a highly dopedp‐type amorphous SiC by using the pulsed laser‐induced transient photopotential technique. Applied Physics Letters, 51 (21). 1685-1686 doi:10.1063/1.98543
Plain TextItoh, Kiminori, Matsumoto, Hidetoshi, Kobata, Tsuyoshi, Fujishima, Akira, Nakamura, Osamu, Fukui, Keitaro (1987) Determining height of a leaky Schottky barrier existing in the junction between SnO2and a highly dopedp‐type amorphous SiC by using the pulsed laser‐induced transient photopotential technique. Applied Physics Letters, 51 (21). 1685-1686 doi:10.1063/1.98543
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

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Itoh, Kiminori, Baba, Ryo, Fujishima, Akira (1987) Application of a pulsed laser-induced photopotential technique to the current doubling process on polycrystalline oxide semiconductor electrodes. Chemical Physics Letters, 135. 521-524 doi:10.1016/0009-2614(87)85203-x
Itoh, Kiminori, Nakao, Masashi, Honda, Kenichi (1985) A study on thin film Fe2O3photoanodes by measuring laser‐induced photopotential. Journal of Applied Physics, 57 (12). 5493-5498 doi:10.1063/1.334826
Wu, Ching‐Yuan (1980) Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer. Journal of Applied Physics, 51 (9). 4919-4922 doi:10.1063/1.328365
Zhang, T., Sigmon, T. W., Weiner, K. H., Carey, P. G. (1989) Defect‐induced Schottky barrier height modification by pulsed laser melting of GaAs. Applied Physics Letters, 55 (6). 580-582 doi:10.1063/1.101839
Tomer, D., Rajput, S., Hudy, L. J., Li, C. H., Li, L. (2014) Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction. Applied Physics Letters, 105 (2). 21607pp. doi:10.1063/1.4890405
Okano, Mitsutoshi, Itoh, Kiminori, Kikuchi, Eiji, Fujishima, Akira (1987) Area‐selective deposition of organic conducting polymers on semiconductors: Polypyrrole‐ZnO system. Journal of Applied Physics, 62 (5). 2143-2145 doi:10.1063/1.339512
Teraji, T., Hara, S., Okushi, H., Kajimura, K. (1997) Ideal Ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height. Applied Physics Letters, 71 (5). 689-691 doi:10.1063/1.119831
Reshanov, S. A., Pensl, G., Danno, K., Kimoto, T., Hishiki, S., Ohshima, T., Itoh, H., Yan, Fei, Devaty, R. P., Choyke, W. J. (2007) Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy. Journal of Applied Physics, 102 (11). 113702pp. doi:10.1063/1.2818050
Okano, Mitsutoshi, Itoh, Kiminori, Fujishima, Akira (1987) Incorporation of Dye Molecules in Polypyrrole Films in the Process of Photoelectrochemical Deposition. Chemistry Letters, 16 (11). 2129-2130 doi:10.1246/cl.1987.2129
Lee, Jaehyun, Kim, Seungchul, Shin, Mincheol (2017) A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction. Applied Physics Letters, 110 (23). 233110pp. doi:10.1063/1.4985013
Toyoshima, Yasutake, Kumata, Ken, Itoh, Uichi, Matsuda, Akihisa (1987) Hydrogenated amorphous silicon prepared by ArF and F2excimer laser‐induced photochemical vapor deposition. Applied Physics Letters, 51 (23). 1925-1927 doi:10.1063/1.98302
 
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