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Whittle, R., Murphy, A., Dudzik, E., McGovern, I. T., Hempelmann, A., Nowak, C., Zahn, D. R. T., Cafolla, A., Braun, W. (1995) Electronic Band Structure of Monolayer Bi on GaP(110). Journal of Synchrotron Radiation, 2 (5). 256-260 doi:10.1107/s0909049595009770

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Reference TypeJournal (article/letter/editorial)
TitleElectronic Band Structure of Monolayer Bi on GaP(110)
JournalJournal of Synchrotron Radiation
AuthorsWhittle, R.Author
Murphy, A.Author
Dudzik, E.Author
McGovern, I. T.Author
Hempelmann, A.Author
Nowak, C.Author
Zahn, D. R. T.Author
Cafolla, A.Author
Braun, W.Author
Year1995 (September 1)Volume2
Issue5
PublisherInternational Union of Crystallography (IUCr)
DOIdoi:10.1107/s0909049595009770Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481811Long-form Identifiermindat:1:5:8481811:1
GUID0
Full ReferenceWhittle, R., Murphy, A., Dudzik, E., McGovern, I. T., Hempelmann, A., Nowak, C., Zahn, D. R. T., Cafolla, A., Braun, W. (1995) Electronic Band Structure of Monolayer Bi on GaP(110). Journal of Synchrotron Radiation, 2 (5). 256-260 doi:10.1107/s0909049595009770
Plain TextWhittle, R., Murphy, A., Dudzik, E., McGovern, I. T., Hempelmann, A., Nowak, C., Zahn, D. R. T., Cafolla, A., Braun, W. (1995) Electronic Band Structure of Monolayer Bi on GaP(110). Journal of Synchrotron Radiation, 2 (5). 256-260 doi:10.1107/s0909049595009770
In(1995, September) Journal of Synchrotron Radiation Vol. 2 (5) International Union of Crystallography (IUCr)

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Whittle, R., Dudzik, E., McGovern, I.T., Zahn, D.R.T., Nowak, C., Cafolla, A., Braun, W. (1993) Surface electronic structure of monolayer Bi on InP(110). Surface Science Letters, 287. doi:10.1016/0167-2584(93)90490-a
Whittle, R., Dudzik, E., McGovern, I.T., Zahn, D.R.T., Nowak, C., Cafolla, A., Braun, W. (1993) Surface electronic structure of monolayer Bi on InP(110). Surface Science, 287. 554-558 doi:10.1016/0039-6028(93)90841-7
Dudzik, E., Whittle, R., Müller, C., McGovern, I.T., Nowak, C., Märkl, A., Hempelmann, A., Zahn, D.R.T., Cafolla, A., Braun, W. (1994) The adsorption of H2S on InP (110) and GaP (110). Surface Science, 307. 223-227 doi:10.1016/0039-6028(94)90398-0
Whittle, R., McGovern, I.T., Zahn, D.R.T., Müller, C., Nowak, C., Cafolla, A., Braun, W. (1992) Surface electronic structure of monolayer Sb on InP(110). Applied Surface Science, 56. 218-223 doi:10.1016/0169-4332(92)90237-r
McGovern, I T, Whittle, R, Zahn, D R T, Muller, C, Nowak, C, Cafolla, A, Braun, W (1991) Photoelectron bandstructure of InP(110)-Sb monolayers. Journal of Physics: Condensed Matter, 3. doi:10.1088/0953-8984/3/s/057
Nowak, C., Chassé, A., Hempelmann, A., Richter, W., Dudzik, E., Whittle, R., McGovern, I.T., Braun, W., Zahn, D.R.T. (1994) Epitaxial antimony monolayers on III–V(110) surfaces studied by low-energy photoelectron diffraction. Surface Science, 307. 685-690 doi:10.1016/0039-6028(94)91477-x
Nowak, C., Hempelmann, A., Märkl, A., Chassé, A., Dudzik, E., Müller, C., McGovern, I.T., Braun, W., Richter, W., Zahn, D.R.T. (1995) Low-energy photoelectron diffraction study of epitaxial Sb monolayers on GaAs(110). Surface Science, 331. 564-568 doi:10.1016/0039-6028(95)00318-5
Whittle, R, McGovern, I T, Hughes, A, Shen, T -H, Matthai, C C (1993) A theoretical study of the electronic structure of clean GaP(110) and Sb on GaP(110) surfaces. Journal of Physics: Condensed Matter, 5 (36). 6555-6562 doi:10.1088/0953-8984/5/36/010
Dudzik, E, Leslie, A, O'Toole, E, McGovern, I T, Patchett, A, Zahn, D R T, Lüdecke, J, Woodruff, D P, Cowie, B C C (1996) An x-ray standing-wave study of adsorption on InP(110). Journal of Physics: Condensed Matter, 8 (1). 15-24 doi:10.1088/0953-8984/8/1/004
Zahn, D.R.T., Esser, N., Müller, C., Richter, W., Stephens, C., Whittle, R., McGovern, I.T., Kulkarni, S., Braun, W. (1992) Influence of Sb and Bi epitaxial monolayers on the metal/GaAs(110) interface formation. Applied Surface Science, 56. 228-232 doi:10.1016/0169-4332(92)90239-t
Dudzik, E., Müller, C., McGovern, I.T., Lloyd, D.R., Patchett, A., Zahn, D.R.T., Johal, T., McGrath, R. (1995) H2S adsorption on the (110) surfaces of III–V semiconductors. Surface Science, 344 (1). 1-10 doi:10.1016/0039-6028(95)00799-7
 
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