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Spitzer, M. B., Keavney, C. J., Vernon, S. M., Haven, V. E. (1987) Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (5). 364-366 doi:10.1063/1.98442

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Reference TypeJournal (article/letter/editorial)
TitleIndium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsSpitzer, M. B.Author
Keavney, C. J.Author
Vernon, S. M.Author
Haven, V. E.Author
Year1987 (August 3)Volume51
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.98442Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482093Long-form Identifiermindat:1:5:8482093:0
GUID0
Full ReferenceSpitzer, M. B., Keavney, C. J., Vernon, S. M., Haven, V. E. (1987) Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (5). 364-366 doi:10.1063/1.98442
Plain TextSpitzer, M. B., Keavney, C. J., Vernon, S. M., Haven, V. E. (1987) Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (5). 364-366 doi:10.1063/1.98442
In(1987, August) Applied Physics Letters Vol. 51 (5) AIP Publishing

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Keavney, C. J., Spitzer, M. B. (1988) Indium phosphide solar cells made by ion implantation. Applied Physics Letters, 52 (17). 1439-1440 doi:10.1063/1.99095
Pearton, S. J., Malm, D. L., Heimbrook, L. A., Kovalchick, J., Abernathy, C. R., Caruso, R., Vernon, S. M., Haven, V. E. (1987) Heterointerface stability in GaAs‐on‐Si grown by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (9). 682-684 doi:10.1063/1.98333
Pearton, S. J., Vernon, S. M., Short, K. T., Brown, J. M., Abernathy, C. R., Caruso, R., Chu, S. N. G., Haven, V. E., Bunker, S. N. (1987) Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator. Applied Physics Letters, 51 (15). 1188-1190 doi:10.1063/1.98728
Keavney, C. J., Vernon, S. M., Haven, V. E., Wojtczuk, S. J., Al‐Jassim, M. M. (1989) Fabrication ofn+/pInP solar cells on silicon substrates. Applied Physics Letters, 54 (12). 1139-1141 doi:10.1063/1.100741
Pearton, S. J., Vernon, S. M., Abernathy, C. R., Short, K. T., Caruso, R., Stavola, M., Gibson, J. M., Haven, V. E., White, A. E., Jacobson, D. C. (1987) Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition. Journal of Applied Physics, 62 (3). 862-867 doi:10.1063/1.339690
Pearton, S. J., Short, K. T., Macrander, A. T., Abernathy, C. R., Mazzi, V. P., Haegel, N. M., Al‐Jassim, M. M., Vernon, S. M., Haven, V. E. (1989) Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition. Journal of Applied Physics, 65 (3). 1083-1088 doi:10.1063/1.343043
Pearton, S. J., Abernathy, C. R., Caruso, R., Vernon, S. M., Short, K. T., Brown, J. M., Chu, S. N. G., Stavola, Michael, Haven, V. E. (1988) Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 63 (3). 775-783 doi:10.1063/1.341141
Chen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697
Razeghi, M., Maurel, Ph., Omnes, F., Nagle, J. (1987) Monolayer epitaxy of III‐V compounds by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 51 (26). 2216-2218 doi:10.1063/1.98944
Yang, Jane J., Ruth, Ralph P., Manasevit, Harold M. (1981) Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 52 (11). 6729-6734 doi:10.1063/1.328624
Ahrenkiel, R. K., Johnston, S. W., Keyes, B. M., Friedman, D. J., Vernon, S. M. (2000) Transport properties of GaAs1−xNx thin films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 77 (23). 3794-3796 doi:10.1063/1.1328774
 
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