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Ortega, Luc, Comin, Fabio, Formoso, Vincenzo, Stierle, Andreas (1998) Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline. Journal of Synchrotron Radiation, 5 (3). 1064-1066 doi:10.1107/s0909049597016737

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Reference TypeJournal (article/letter/editorial)
TitleTrace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline
JournalJournal of Synchrotron Radiation
AuthorsOrtega, LucAuthor
Comin, FabioAuthor
Formoso, VincenzoAuthor
Stierle, AndreasAuthor
Year1998 (May 1)Volume5
Issue3
PublisherInternational Union of Crystallography (IUCr)
DOIdoi:10.1107/s0909049597016737Search in ResearchGate
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Mindat Ref. ID8482372Long-form Identifiermindat:1:5:8482372:4
GUID0
Full ReferenceOrtega, Luc, Comin, Fabio, Formoso, Vincenzo, Stierle, Andreas (1998) Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline. Journal of Synchrotron Radiation, 5 (3). 1064-1066 doi:10.1107/s0909049597016737
Plain TextOrtega, Luc, Comin, Fabio, Formoso, Vincenzo, Stierle, Andreas (1998) Trace element analysis on Si wafer surfaces by TXRF at the ID32 ESRF undulator beamline. Journal of Synchrotron Radiation, 5 (3). 1064-1066 doi:10.1107/s0909049597016737
In(1998, May) Journal of Synchrotron Radiation Vol. 5 (3) International Union of Crystallography (IUCr)


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